Plasma-enhanced chemical vapor deposition SiN films: Some electrical properties

Abstract

Effect of rapid thermal annealing treatment on electrical properties and microstructure of tantalum oxide thin film deposited by plasmaenhanced chemical vapor deposition Effect of power on interface and electrical properties of SiO2 films produced by plasmaenhanced chemicalvapor deposition Electrical and structural properties of rapid thermally annealed borondoped silicon films deposited by plasma enhanced chemicalvapor deposition Experimental data are presented on the effects of varying deposition parameters of silanel ammonia fiow rate ratio, rf power, deposition pressure, and substrate temperature, on the resistivity and breakdown field, static and dynamic dielectric constants, activation energy, and barrier height, of plasma-enhanced chemical vapor deposition SiN films prepared in the temperature range 100-300 "C. Results show a strong dependence of the breakdown field and resistivity on rf power, the former increasing by a factor of 5 and the latter by 11 orders of magnitude, as power varies from 50 to 250 W. Current-voltage measurements favor a Frenkel-Poole conduction process, with a barrier height in the range 0.8-1.2 e V and an activation energy in the range 0.29-0.45 eV. Annealing in nitrogen at 400·C leads to a decrease in film resistivity. This is attributed to the loss of hydrogen, incorporated as Si-H and N-H bonds in the film. The decrease in positively charged dangling bonds is supported by the resulting shift in the fiat-band voltage on a metal-insulator semiconductor structure. Partial recovery of film resistivity has been demonstrated through further annealing in hydrogen. Polarization and trapping instabilities in the capacitance-voltage measurements have also been observed.

Mechanism of SiN x H y Deposition from NH 3 ‐ SiH4 Plasma

“…At the 60W condition as discussed with Fig. 8, atom percent H by infrared was 20% lower than at 18W (20 a]o vs. 24, not shown in Fig. 10a).…”

“…Dielectric properties that have been reported include resistivity (p), breakdown voltage (Eb), and the rate of trapping of injected charge at deep gap states, which is characterized by the flatband voltage shift (iV) of a MIS capacitor after electrical stressing. It turns out that these dielectric properties all improve in the process directions which correlate with increasing x. Eb and p increase with both NHjSiH4 (17) and RF power (23,24). Eb also increases with [N--H]/[Si--H] (18), and p increases with both x (25) and [N--H]/[Si--H] (26).…”

Surface Control of Bottom Electrode in Ultra-Thin SiN Metal–Insulator–Metal Decoupling Capacitors for High Speed Processors

“…Besides 0 parameter, t and " d were nearly identical to the reported values for the thicker SiN capacitors. 7,16,17) Hugon et al reported that the SiN capacitor with less than 20-nm-thick film did not showed P-F conduction, however, we found that the Ta-covered TiN BE extended the thickness range for P-F conduction down to 10 nm thickness.…”

“…It is well-known that the P-F conduction dominates the leakage mechanism in the SiN capacitor, where the SiN thickness exceeds 20 nm. 7,[16][17][18] The P-F conduction was expressed as…”

“…From the viewpoint of manufacturing, SiN (k ¼ 6 { 8 [7][8][9][10] ) is the first candidate for the dielectric of the MIM, because it is a mature material and highly compatible with existing fabrication lines. The capacitance of the SiN MIM, however, has been reported as $2 fF/mm 2 , with thicker than 30 nm thickness, 11) which is not sufficient for decoupling capacitors in the advanced devices.…”