Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

Mishina, Ken; Ogishi, A.; Ueno, Kiyoshi; Jonai, Sachiko; Ikeno, Norihiro; Saruwatari, Tetsuya; Hara, Kohjiro; Ogura, Atsushi; Yamazaki, Toshiharu; Doi, Takuya; Shinohara, Makoto; Masuda, Atsushi

doi:10.7567/jjap.54.08kd12

Cited by 17 publications

(15 citation statements)

References 21 publications

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“…The chemical compositions of SiN x passivation films affect PID resistance. [ 9,10,71,72,78,79 ] Moreover, thin SiO 2 layers formed underneath the SiN x reduce shunting‐type PID. [ 80–82 ] Surface morphology also affects PID.…”

Section: Pid Phenomena In Conventional P‐type C‐si Pv Cell Modulesmentioning

confidence: 99%

“…In addition, it is preferable to have intrinsically PID‐free solar cells that are independent of module manufacturers or installers to apply the right (expensive) materials or correct grounding on the systems. Actually, PID has been shown to be preventable by chemical composition modification of the SiN x passivation layers on the emitter side of c‐Si PV cells [ 9,10,71,72,78,79 ] because the increased conductivity of the SiN x layer reduces the voltage across the SiN x layer. Chemical composition modification is realized merely by changing the ratio of silane (SiH 4 ) gas flow rate to the ammonia (NH 3 ) gas flow rate during chemical vapor deposition (CVD).…”

Section: Pid Phenomena In Conventional P‐type C‐si Pv Cell Modulesmentioning

confidence: 99%

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Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

et al. 2021

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n‐Type crystalline‐silicon (c‐Si) photovoltaic (PV) cell modules attract attention because of their potential for achieving high efficiencies. The market share of n‐type c‐Si PV modules is expected to increase considerably, with wide use in PV systems, including large‐scale PV systems, for which the system bias is set as markedly high. Such a high system bias leads to performance losses known as potential‐induced degradation (PID). By virtue of many researchers’ efforts, the PID behaviors, mechanisms, and preventive measures against PID have been well documented in conventional p‐type c‐Si modules. Researchers recently started to investigate PID in high‐efficiency c‐Si solar cells including n‐type c‐Si PV modules. Yet, the understanding of PID phenomena remains incomplete. Herein, a literature review of PID in high‐efficiency n‐type c‐Si PV modules is provided as a resource elucidating the current status of related research and remaining unresolved issues. This report mainly presents discussion of PID in several kinds of n‐type c‐Si PV modules in terms of materials science. PID phenomena are described as divided into some degradation modes. Details present a review of their respective degradation modes, degradation behaviors, proposed mechanisms, and potential measures against degradation. Remaining open issues and anticipated future studies are also summarized.

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Section: Pid Phenomena In Conventional P‐type C‐si Pv Cell Modulesmentioning

confidence: 99%

Section: Pid Phenomena In Conventional P‐type C‐si Pv Cell Modulesmentioning

confidence: 99%

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

et al. 2021

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“…With this module, only the light-receiving side of the solar cell, i.e. the anti-reflection coating, which is more important for generating the PID phenomena, 3,12,[22][23][24][25][26][27][28][29][30] is encapsulated during the PV module fabrication. The single-encapsulation module can be analyzed directly after PID testing because the nonlight-receiving side of the module is in the air and because no pre-processing is required for micro-analyses of the PID phenomena of the whole cell.…”

Section: Introductionmentioning

confidence: 99%

Potential-induced degradation phenomena in single-encapsulation crystalline Si photovoltaic modules

Qin,

Yonemoto,

Gotoh

et al. 2023

Jpn. J. Appl. Phys.

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This paper particularly explains potential-induced degradation (PID) of wafer-based standard p-type crystalline silicon technology. We present a single-encapsulation method that is useful for simulating PID in the laboratory to facilitate microanalyses of module-level solar cells. The PID testing is performed for the module with single-encapsulation and conventional modules. Their current–voltage characteristics and electroluminescence images are investigated before and after the PID tests. As described herein, we infer that the single-encapsulation modules generate PID almost in the same way as conventional modules do, and that the degradation trend is almost identical to that of conventional modules. Results of PID recovery tests indicate that the time necessary for PID recovery is always less than that for PID generation, irrespective of the encapsulation method.

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“…V. Naumann et al think that PID is related with sodium decorated stacking faults across the pn junction under high system voltage [15][16][17][18]. S. Koch, K. Mishina and Zhou found that adding two or three layers coatings into crystalline silicon solar cells could reduce the sensitivity of PID [19][20][21]. J. Hylsky et al deem that crystalline silicon solar cells with the phosphorus silicate glass show properties resistive against PID [22].…”

Section: Introductionmentioning

confidence: 99%

Regular and Irregular Performance Variation of Module String and Occurred Conditions for Potential Induced Degradation-Affected Crystalline Silicon Photovoltaic Power Plants

2019

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Potential induced degradation (PID) leads to power degradation, and reduces durability and reliability of solar modules. However, this problem has not been thoroughly solved so far. The results from interlaboratory and field study show contradictory fault phenomenon for PID. In this paper, PID of crystalline silicon photovoltaic power plants distributed in various climate conditions was investigated. These photovoltaic power plants consist of two types of crystalline silicon solar modules, which cover almost all kinds of front glass, ethyl vinyl acetate (EVA) and backsheet available commercially. It was found that only a few of power plants were affected by PID. By measuring current voltage characteristics of PID-affected solar modules, the real faults phenomenon was uncovered and classified into regular and irregular power degradation in a module string. The results obtained in this work show that the negative potential caused by high system voltage and stacking faults are necessary and sufficient conditions for PID occurrence for the first time. The anomalous power degradation is related to the stacking fault, which appears randomly during the crystal growth.

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Plasma-enhanced chemical-vapor deposition of silicon nitride film for high resistance to potential-induced degradation

Cited by 17 publications

References 21 publications

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Potential‐Induced Degradation in High‐Efficiency n‐Type Crystalline‐Silicon Photovoltaic Modules: A Literature Review

Potential-induced degradation phenomena in single-encapsulation crystalline Si photovoltaic modules

Regular and Irregular Performance Variation of Module String and Occurred Conditions for Potential Induced Degradation-Affected Crystalline Silicon Photovoltaic Power Plants

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