Investigation on antireflection coating for high resistance to potential-induced degradation

Abstract

In this study, we focus on the relationship between potential-induced degradation (PID) and characteristics of antireflection coating (ARC) on crystalline silicon solar cells. We evaluated the PID of general industrial multicrystalline p-type silicon solar cell groups with various ARCs. The module, which has an ARC deposited by plasma-enhanced chemical vapor deposition (PE-CVD) using a hollow cathode, indicated high resistance to PID with maintained conventional refractive index (RI). This ARC had properties of high conductivity and low oxygen concentration. It has the potential to suppress PID on crystalline silicon solar cells with maintained conventional RI.

Potential-induced degradation in photovoltaic modules based on n-type single crystalline Si solar cells

“…For instance, we have reported that PID can be significantly suppressed by using a acrylic-film as a front cover substrate [15], control of antireflection coating on the surface of crystalline Si solar cell [22], using TiO 2 -thin film coated on the inner side of the cover glass [23], and introducing a thin polyethylene (PE) film into a conventional p-type Si PV module [24]. These results imply possibilities of promising PID-resistant techniques.…”

Potential Induced Degradation(PID) of Crystalline Silicon Solar Modules

“…누설 전류에 의 하여 Na 이온이 태양전지 표면까지 이동하게 되는 상 황을 예상할 수 있고 이 관점에서 Na 이온의 PID 영향 성에 대한 연구가 진행되고 있다. [13][14][15][16][17][18][19] J. Bauer, V. Naumann 등은 모듈에 전압을 인가한 후 Time-of-flight Secondary ion mass spectroscopy(ToF-SIMS)를 이용하여 PID 이후 Na 이온에 의해 에미터 특 성이 변할 수 있음을 제안하였다. ( Fig.…”

The Effect of Microcrack Length in Silicon Cells on the Potential Induced Degradation Behavior

“…The efficiency of the modules may probably degrade due to this high negative bias under heat and humidity, which is known as the potential induced degradation, PID [10,11]. A number of factors [12][13][14][15][16][17][18][19][20][21], such as stacking faults in the silicon wafer, refractive index of the antireflection coating, resistance of the encapsulant material, and design of the power station, have been found and demonstrated to be related with the PID behavior. However, it has never been investigated whether the existed microscopic microcracks in cells will facilitate the PID behavior of modules.…”