Effect of Ion Irradiation on Amorphous and Crystalline Ge–Se and Their Application as Phase Change Temperature Sensor

Abstract

Research on phase change materials is predominantly focused on their application as memory devices or for temperature control which requires low phase change temperature. The Ge–Se binary chalcogenide glass system with its wide glass‐forming region is a potential candidate for high‐temperature and high‐radiation phase change applications. Herein, the concept of employing Ge x Se100−x glasses to monitor high temperature (450–528 °C) using the phase change effect, is reported. Materials selection, device structure, and performance of prototype sensors are analyzed. In addition, the effect of heavy ion irradiation by Xe ions with energies of 200, 600, and 1000 keV (fluence ≈1014 cm−2) on the Ge x Se100−x (x = 30, 33, 40) thin films and phase change devices is studied. The irradiation effect on the amorphous and crystalline structure of the thin films is evaluated by Raman spectroscopy and X‐ray diffraction (XRD). Although the changes in the structural units of amorphous films are negligible, in crystalline films orthorhombic‐GeSe2 crystals are found to be most affected by irradiation and a new phase, orthorhombic GeSe is found in the thin films after irradiation. The performance of a sensor with an active film of Ge40Se60 is also shown as an example.

Influence of Proton Ion Irradiation on the Linear–Nonlinear Optoelectronic Properties of Sb40Se20S40 Thin Films at Different Fluences for Photonic Devices

“…Heavy ion irradiation of the Ge x Se 100−x thin film with Xe ions with various energies resulted in a structural change with the formation of the GeSe orthorhombic phase. 26 The study of ion irradiationinduced modifications is hitherto for Sb−Se−S chalcogenide thin films. No significant work done by the effect of proton irradiation on the Sb−Se−S system and changes in the related properties has been done.…”

A universal growth method for high-quality phase-engineered germanium chalcogenide nanosheets

“…26 Moreover, their easy formation of acceptor-like Ge vacancies endow germanium chalcogenide with p-type character, which expands the library of p-type semiconductors and provides more options for realizing multifunctional devices. 27–30…”

Proton Irradiation Effects on the Pyroelectric Properties of P‐Type Bismuth Antimonide/Poly(vinylidene fluoride–trifluoroethylene) Composite Films

“…Various energies of gamma rays, electrons, and ions have been used to irradiate P(VDF-TrFE) in studies of the behavior of P(VDF-TrFE) and its impact on P(VDF-TrFE) pyroelectric performance and properties such as dielectricity, ferroelectricity, and electrocaloricity. [37][38][39][40][41] In such bombardment, proton irradiation exhibits strong penetrating power due to its light weight, small band point, and low energy transfer efficiency. Entering the interior of the material more easily than other radiation types, proton irradiation induces cross-linking reactions within the polymer, altering its physicochemical properties.…”