Ferroelectric polymers have great potential applications in mechanical/thermal sensing, but their sensitivity and detection limit are still not outstanding. We propose interface engineering to improve the charge collection in a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) copolymer (P(VDF-TrFE)) thin film via cross-linking with poly(3,4-ethylenedioxythiophene) doped with polystyrenesulfonate (PEDOT:PSS) layer. The as-fabricated P(VDF-TrFE)/PEDOT:PSS composite film exhibits an ultrasensitive and linear mechanical/thermal response, showing sensitivities of 2.2 V kPa−1 in the pressure range of 0.025–100 kPa and 6.4 V K−1 in the temperature change range of 0.05–10 K. A corresponding piezoelectric coefficient of −86 pC N−1 and a pyroelectric coefficient of 95 μC m−2 K−1 are achieved because more charge is collected by the network interconnection interface between PEDOT:PSS and P(VDF-TrFE), related to the increase in the dielectric properties. Our work shines a light on a device-level technique route for boosting the sensitivity of ferroelectric polymer sensors through electrode interface engineering.
Organic pyroelectric materials are widely applied as temperature sensors in wearable electronic devices due to their good biocompatibility and stability. Real‐time monitoring of the physiological state of the human body requires pyroelectric materials with a fast response time and large output voltage. In this study, the pyroelectric characteristics of poly(vinylidene fluoride–trifluoroethylene) (P(VDF–TrFE)) films are improved with the use of commercial inorganic P‐type bismuth antimonide (P‐Bi2Te3) fillers. Composite films with 0.2 wt% P‐Bi2Te3 increase the pyroelectric response time and voltage by improving the thermal diffusivity and enhancing the β‐phase content, respectively. Proton irradiation results in further improvement of the pyroelectric response time from 22 to 0.5 s. The proton irradiation‐induced ionization energy loss improves the conductivity of the composite films, thereby enhancing the pyroelectric response time. These results show that P‐Bi2Te3 doping is beneficial for improving the pyroelectric properties of P(VDF–TrFE) and that proton irradiation is an effective method for further improving the response time of inorganic–organic composite films.
The low storage density of ferroelectric thin film memory currently limits the further application of ferroelectric memory. Topologies based on controllable ferroelectric domain structures offer opportunities to develop microelectronic devices such as high-density memories. This study uses ferroelectric topology domains in a ferroelectric field-effect transistor (FeFET) structure for memory. The electrical behavior of FeFET and its flip properties under strain and electric fields are investigated using a phase-field model combined with the device equations of field-effect transistors. When the dimensionless electric field changes from −0.10 to 0.10, the memory window drops from 2.49 V to 0.6 V and the on-state current drops from 2.511 mA to 1.951 mA; the off-state current grows from 1.532 mA to 1.877 mA. External tensile stress increases the memory window and off-state current, while compressive stress decreases it. This study shows that a ferroelectric topology can be used as memory and could significantly increase the storage density of ferroelectric memory.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.