Ferroelectric polymers have great potential applications in mechanical/thermal sensing, but their sensitivity and detection limit are still not outstanding. We propose interface engineering to improve the charge collection in a ferroelectric poly(vinylidene fluoride-co-trifluoroethylene) copolymer (P(VDF-TrFE)) thin film via cross-linking with poly(3,4-ethylenedioxythiophene) doped with polystyrenesulfonate (PEDOT:PSS) layer. The as-fabricated P(VDF-TrFE)/PEDOT:PSS composite film exhibits an ultrasensitive and linear mechanical/thermal response, showing sensitivities of 2.2 V kPa−1 in the pressure range of 0.025–100 kPa and 6.4 V K−1 in the temperature change range of 0.05–10 K. A corresponding piezoelectric coefficient of −86 pC N−1 and a pyroelectric coefficient of 95 μC m−2 K−1 are achieved because more charge is collected by the network interconnection interface between PEDOT:PSS and P(VDF-TrFE), related to the increase in the dielectric properties. Our work shines a light on a device-level technique route for boosting the sensitivity of ferroelectric polymer sensors through electrode interface engineering.
Contributing to excellent photoelectric property, the tunable bandgap and intercorrelated in-plane and out-of-plane ferroelectric polarization simultaneously, α-In2Se3 has great potential in the applications of optoelectronic devices and photo-controlled devices, like memories, sensors, and synapses. However, little attention is paid to the in-plane anisotropic photoelectric property of α-In2Se3, which may restrict its competitiveness in application of designing and fabrication of optoelectronic devices and photo-controlled devices. Herein, multi-layered α-In2Se3 based phototransistors with eight terminals are prepared, and its in-plane anisotropic photodetection is investigated. By comparing the dark current (Idark), photocurrent (Iph), responsivity (R), external quantum efficiency (EQE), and specific detectivity (D*), in-plane anisotropic photoelectric property of multi-layered α-In2Se3 is demonstrated, and the Idark, Iph, R, EQE, and D* anisotropic ratios are up to 163.76, 480.59, 480.59, 480.59, and 58.8, respectively. The carrier mobility and the in-plane ferroelectric polarization are the two main factors determining the in-plane anisotropic photoelectric property. The excellent in-plane anisotropic photoelectric property makes α-In2Se3 a promising candidate as an in-plane anisotropic semiconductor for high-sensitivity optoelectronic and photo-controlled applications.
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