Research on phase change materials is predominantly focused on their application as memory devices or for temperature control which requires low phase change temperature. The Ge–Se binary chalcogenide glass system with its wide glass‐forming region is a potential candidate for high‐temperature and high‐radiation phase change applications. Herein, the concept of employing Ge
x
Se100−x
glasses to monitor high temperature (450–528 °C) using the phase change effect, is reported. Materials selection, device structure, and performance of prototype sensors are analyzed. In addition, the effect of heavy ion irradiation by Xe ions with energies of 200, 600, and 1000 keV (fluence ≈1014 cm−2) on the Ge
x
Se100−x
(x = 30, 33, 40) thin films and phase change devices is studied. The irradiation effect on the amorphous and crystalline structure of the thin films is evaluated by Raman spectroscopy and X‐ray diffraction (XRD). Although the changes in the structural units of amorphous films are negligible, in crystalline films orthorhombic‐GeSe2 crystals are found to be most affected by irradiation and a new phase, orthorhombic GeSe is found in the thin films after irradiation. The performance of a sensor with an active film of Ge40Se60 is also shown as an example.
Chalcogenide glasses are one of the most versatile materials that have been widely researched because of their flexible optical, chemical, electronic, and phase change properties. Their application is usually in the form of thin films, which work as active layers in sensors and memory devices. In this work, we investigate the formulation of nanoparticle ink of Ge–Se chalcogenide glasses and its potential applications. The process steps reported in this work describe nanoparticle ink formulation from chalcogenide glasses, its application via inkjet printing and dip-coating methods and sintering to manufacture phase change devices. We report data regarding nanoparticle production by ball milling and ultrasonication along with the essential characteristics of the formed inks, like contact angle and viscosity. The printed chalcogenide glass films were characterized by Raman spectroscopy, X-ray diffraction, energy dispersive spectroscopy and atomic force microscopy. The printed films exhibited similar compositional, structural, electronic and optical properties as the thermally evaporated thin films. The crystallization processes of the printed films are discussed compared to those obtained by vacuum thermal deposition. We demonstrate the formation of printed thin films using nanoparticle inks, low-temperature sintering and proof for the first time, their application in electronic and photonic temperature sensors utilizing their phase change property. This work adds chalcogenide glasses to the list of inkjet printable materials, thus offering an easy way to form arbitrary device structures for optical and electronic applications.
We demonstrate a novel chalcogenide glass (ChG)-capped optical fiber temperature sensor capable of operating within harsh environment. The sensor architecture utilizes the heat-induced phase change (amorphous-to-crystalline) property of ChGs, which rapidly (80–100 ns) changes the optical properties of the material. The sensor response to temperature variation around the phase change of the ChG cap at the tip of the fiber provides abrupt changes in the reflected power intensity. This temperature is indicative of the temperature at the sensing node. We present the sensing performance of six different compositions of ChGs and a method to interpret the temperature profile between 440 ∘C and 600 ∘C in real-time using an array structure. The unique radiation-hardness property of ChGs makes the devices compatible with high-temperature and high-radiation environments, such as monitoring the cladding temperature of Light Water (LWR) or Sodium-cooled Fast (SFR) reactors.
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