Structural transformation in 
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Sakaguchi, Yoshifumi; Hanashima, Τakayasu; Ohara, Koji; Simon, Al-Amin Ahmed; Mitkova, M.

doi:10.1103/physrevmaterials.3.035601

Cited by 17 publications

(7 citation statements)

References 90 publications

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“…[ 40,41 ] In Ge 20 S 80 glasses, the glass network is composed of GeS and SS bonds. [ 26 ] We infer from these results that the light excitation from the lone‐pair band to the antibonding band leads to the breaking of these bonds. After the bond breaking, chalcogen atoms can trap Ag ions, which are introduced to the chalcogenide host layer through the energy junction, leading to an intercalation reaction as Kluge [ 36 ] expected.…”

Section: Resultsmentioning

confidence: 94%

“…In our previous study, it is located at Q = 1.01 Å −1 . [ 26 ] In the diffraction pattern of the unexposed sample, there is a very small hump around 15°. This could be the FSDP of a‐Ge 20 S 80 , which is underneath of the Ag layer.…”

Section: Resultsmentioning

confidence: 99%

“…Neutron diffraction measurement of ternary Ag–Ge–S glasses also shows the same behavior; the FSDP decreases with increasing Ag content. [ 26 ] It is generally accepted that the FSDP indicates the interstitial voids in the glass network. [ 28–30 ] Actually, the structural study of Ag x (Ge 0.42 S 0.58 ) 100– x glasses demonstrated that the cavity volume of x = 0 is much greater than that of x = 20.…”

Section: Resultsmentioning

confidence: 99%

See 2 more Smart Citations

Excitation Light Energy Dependence of Silver Photodiffusion into Amorphous Germanium Sulfide: Neutron and X‐Ray Reflectivity and X‐Ray Diffraction

Sakaguchi

Hanashima

Simon

et al. 2020

Physica Status Solidi (b)

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Silver photodiffusion into amorphous chalcogenides is the photoinduced phenomenon, in which mobile Ag ions are injected into semiconductor films, and is applicable to nonvolatile memory devices. To understand the role of light illumination in the silver diffusion into a chalcogenide layer, the excitation light energy dependence of silver photodiffusion in Ag/a‐Ge20S80/Si substrate stacks is investigated by neutron reflectivity, X‐ray reflectivity, and X‐ray diffraction. The measurements reveal that there is an energy threshold to induce silver photodiffusion, which corresponds to the optical gap of amorphous Ge20S80. The excitation of the lone‐pair electrons to the antibonding states by the light illumination with greater energy than the optical gap leads to the bond breaking, and the Ge–S network structure is reorganized involving Ag ions.

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Section: Resultsmentioning

confidence: 94%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

See 1 more Smart Citation

Excitation Light Energy Dependence of Silver Photodiffusion into Amorphous Germanium Sulfide: Neutron and X‐Ray Reflectivity and X‐Ray Diffraction

Sakaguchi

Hanashima

Simon

et al. 2020

Physica Status Solidi (b)

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show abstract

“…This is not the case for the Ge

compositions, in which the 8-member S rings open up at higher temperatures to become a part of the tetrahedral backbone of the crystalline material, thus leading to observable change in the refractive index of this material. The crystallization kinetics and the formation of different structural units in these glasses are discussed in detail in [ 33 , 41 , 42 ].…”

Section: Resultsmentioning

confidence: 99%

Chalcogenide Glass-Capped Fiber-Optic Sensor for Real-Time Temperature Monitoring in Extreme Environments

Badamchi

Simon

Mitkova

et al. 2021

Sensors

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We demonstrate a novel chalcogenide glass (ChG)-capped optical fiber temperature sensor capable of operating within harsh environment. The sensor architecture utilizes the heat-induced phase change (amorphous-to-crystalline) property of ChGs, which rapidly (80–100 ns) changes the optical properties of the material. The sensor response to temperature variation around the phase change of the ChG cap at the tip of the fiber provides abrupt changes in the reflected power intensity. This temperature is indicative of the temperature at the sensing node. We present the sensing performance of six different compositions of ChGs and a method to interpret the temperature profile between 440 ∘C and 600 ∘C in real-time using an array structure. The unique radiation-hardness property of ChGs makes the devices compatible with high-temperature and high-radiation environments, such as monitoring the cladding temperature of Light Water (LWR) or Sodium-cooled Fast (SFR) reactors.

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“…[26][27][28][29][30][31] It has wide transparency from the visible to the infrared region (up to ≈25 μm). [32][33][34][35][36] Being amorphous, the material Raman gain becomes broadband, enabling a flexible design on the free spectral range (FSR) of integrated microresonators. [10,12,36] Such properties in integrated photonic devices not only enable largely boost the performance of SRS and the Raman lasing at low optical powers but can also lead to nontrivial nonlinear interactions over a large wavelength.…”

Section: Introductionmentioning

confidence: 99%

Engineered Raman Lasing in Photonic Integrated Chalcogenide Microresonators

Xia

Huang

Zhang

et al. 2022

Laser & Photonics Reviews

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Photonic integrated Raman lasers have extended the wavelength range of chip-scale laser sources and have enabled applications including molecular spectroscopy, environmental analysis, and biological detection. Yet, the performance is strongly determined by the pumping condition and Raman shift value of nonlinear medias, leaving challenges to have a widely and continuously tunable Raman laser (e.g., over 100 nm). Here, photonic engineered Raman lasers based on chip-integrated chalcogenide microresonators are demonstrated. The home-developed chalcogenide photonic platform is of high nonlinearity, wide transparency, and low loss. The strong and broadband material Raman response has promised rich dynamics of Raman lasing. Indeed, both single-mode Raman lasing and a broadband Raman-Kerr comb, which are found engineered by tuning the dispersion of the chalcogenide microresonator, are demonstrated. The single-mode Raman laser, together with its cascaded modes, supports a gap-free tuning range over 140 nm, while the threshold power is as low as 3.25 mW. The results may contribute to the understanding of Raman and Kerr nonlinear interactions in dissipative and nonlinear microresonators, and on application aspect, may pave a way to integrated and efficient laser sources that is desired in spectroscopic applications in the infrared.

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Structural transformation in GexS100−x (10≤x≤40)

Cited by 17 publications

References 90 publications

Excitation Light Energy Dependence of Silver Photodiffusion into Amorphous Germanium Sulfide: Neutron and X‐Ray Reflectivity and X‐Ray Diffraction

Excitation Light Energy Dependence of Silver Photodiffusion into Amorphous Germanium Sulfide: Neutron and X‐Ray Reflectivity and X‐Ray Diffraction

Chalcogenide Glass-Capped Fiber-Optic Sensor for Real-Time Temperature Monitoring in Extreme Environments

Engineered Raman Lasing in Photonic Integrated Chalcogenide Microresonators

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