Effect of Current Compliance on Resistive Switching Characteristics of Amorphous Ternary Rare Earth Oxide SmGdO₃ Thin Films Grown by Pulsed Laser Deposition

Abstract

Effect of current compliance on the resistive switching characteristics of SmGdO 3 based resistive random access memory devices has been investigated. It was observed that increasing current compliance during the set process of device decreases the resistance of device in low resistance state and set/reset voltages which was attributed to increase in diameter of conductive filament on increasing current compliance. Switching between low and high resistance states was attributed to formation and rupture these conductive filaments. By systematically varying the current compliance non-volatile and stable 4-level resistance states with sufficient margin of resistance ratios were observed which remained mostly unchanged with respect to time and switching cycles. These findings seem to be promising for futuristic multi-bit nonvolatile memory applications.

Nonpolar resistive memory switching with all four possible resistive switching modes in amorphous LaHoO3 thin films

“…The MIM capacitor structures of these oxides showed nonvolatile unipolar resistive switching, where the change in conduction behavior of the insulating ternary rare-earth oxide film was explained by a filamentary (thermo-chemical) model. 20,21 The conductive filament formation in these oxides was found to originate from the electric field-induced localized agglomeration of chemical defects present in pristine films. 20 In ternary LaLuO Surface topography analysis carried out by AFM measurements demonstrated the homogeneity of the film and the measured root mean square (rms) roughness of the thin layer was found to be ~1.4 nm, as shown in Fig.…”

“…20,21 The conductive filament formation in these oxides was found to originate from the electric field-induced localized agglomeration of chemical defects present in pristine films. 20 In ternary LaLuO Surface topography analysis carried out by AFM measurements demonstrated the homogeneity of the film and the measured root mean square (rms) roughness of the thin layer was found to be ~1.4 nm, as shown in Fig. 1(d).…”