Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH₃NH₃PbI_3−xCl_x/FTO structure

Abstract

A simple organolead perovskite based device Ag/CH3NH3PbI3−xClx/FTO exhibits both digital and analog switching memory features.

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

“…[1,2] OHP film shows hysteresis in current-voltage responses due to defect migration in the perovskite layer in response to an electric field. [14][15][16] Memory devices that use OHPs show good performance, and have their advantages such as flexibility, [10,13] high ON/OFF ratio, multilevel property, [11] and analog switching that may be applicable to neuromorphic computing devices. [14][15][16] Memory devices that use OHPs show good performance, and have their advantages such as flexibility, [10,13] high ON/OFF ratio, multilevel property, [11] and analog switching that may be applicable to neuromorphic computing devices.…”

“…[3][4][5][6] This behavior has been exploited to develop memory devices [7][8][9][10][11][12][13] and synaptic devices. [14][15][16] However, organolead halide memories have only been demonstrated on a small scale with device sizes of tens of micrometers that were produced using solution processes, so the feasibility of using these devices in large-scale, nanosized device applications has not been assessed. [14][15][16] However, organolead halide memories have only been demonstrated on a small scale with device sizes of tens of micrometers that were produced using solution processes, so the feasibility of using these devices in large-scale, nanosized device applications has not been assessed.…”

“…[37,38] In this study, we used vapor deposition which is compatible with conventional methods for silicon-wafer-based and thin-film solar cells; specifically, we used sequential vapor deposition to deposit uniform resistive switching layers into nanotemplates, and this method can be extended to CMOS-compatible processes owing to the possibility of depositing uniform thin films on large areas. [14][15][16] Memory devices that use OHPs show good performance, and have their advantages such as flexibility, [10,13] high ON/OFF ratio, multilevel property, [11] and analog switching that may be applicable to neuromorphic computing devices. The CH 3 NH 3 PbI 3 -based nanoscale memory device shows low-voltage operation, good endurance, and long data retention.…”

Iodine Vacancy Redistribution in Organic–Inorganic Halide Perovskite Films and Resistive Switching Effects

“…[16][17][18] Indeed, RS effects have recently been observed experimentally in devices based on MAPbI 3 films sandwiched between two electrodes. [19][20][21][22] The resistance ratio between the high-resistance state (HRS) and the low-resistance state (LRS) can reach 10 6 under an applied electric field of ≈1 V µm −1 , [20] indicating point defects can reversibly migrate over long distances across the film, and accumulation of large amounts of defects can occur during normal device operations.Besides electric field, light illumination has also been observed to cause defect redistribution in MAPbI 3 films, [23] indicating possibly strong coupling of light illumination and defect generation and movement. However, questions still remain regarding the chemical nature of the defects, and whether and how the distribution of these defects lead to the observed RS effects.…”

“…[16][17][18] Indeed, RS effects have recently been observed experimentally in devices based on MAPbI 3 films sandwiched between two electrodes. [19][20][21][22] The resistance ratio between the high-resistance state (HRS) and the low-resistance state (LRS) can reach 10 6 under an applied electric field of ≈1 V µm −1 , [20] indicating point defects can reversibly migrate over long distances across the film, and accumulation of large amounts of defects can occur during normal device operations.…”