A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

Hwang, Bohee; Lee, Jang‐Sik

doi:10.1002/adma.201701048

Cited by 149 publications

(113 citation statements)

References 52 publications

Supporting

Mentioning

110

Contrasting

Order By: Relevance

“…However, the conventional solution‐based fabricate process of OHP materials cannot be used to deposit into nanoscale template. A sequential vapor deposition method was introduced to used to deposit OHP layers for memristor in nanoscale holes . This method produces a uniform MAPbI 3 layer in the nanotemplates and it can be developed as a CMOS‐compatible processes.…”

Section: Memristors Based On Ohpsmentioning

confidence: 99%

See 1 more Smart Citation

Memristors with organic‐inorganic halide perovskites

Zhao

Lin

et al. 2019

InfoMat

144

115

View full text Add to dashboard Cite

Organic‐inorganic halide perovskites (OHPs) have been intensively studied for application in solar cells with high conversion efficiency exceeding 22%. The unique electrical and optical properties of OHPs have led to their use in optoelectronic device applications beyond photovoltaics, such as light‐emitting diodes, photodetectors, transistors. New information storage technologies and computing architectures are being researched extensively with the aim of addressing the growing challenge of approaching end of Moore's law and von Neumann bottleneck. As the fourth basic circuit element, memristor is a leading candidate with powerful capabilities in information storage and neuromorphic computing applications. Recently, OHPs have received growing attention as promising materials for memristors. In particular, their mixed ionic‐electronic conduction ability paired with light sensitivity provide OHPs with the opportunity to display novel functions such as optical‐erase memory, optogenetics‐inspired synaptic functions, and light‐accelerated learning capability. This review covers recent advances in OHP‐based memristors development including memristive mechanism and analytical models, universal memristive characteristics for memory and neuromorphic computing applications, and novel multi‐functionalization. Challenges and future prospects of OHP‐based memristors are also discussed.

show abstract

Section: Memristors Based On Ohpsmentioning

confidence: 99%

“…A‐D, Schematic illustration of Au/MAPbI 3 /Pt memristor with via‐hole structure and 16 × 16 cross‐bar array structure. E, RS characteristics of the Au/MAPbI 3 /Pt cell with a 250 nm via‐hole structure and F, a 16 × 16 cross‐bar array structure …”

Section: Memristors Based On Ohpsmentioning

confidence: 99%

Memristors with organic‐inorganic halide perovskites

Zhao

Lin

et al. 2019

InfoMat

144

115

View full text Add to dashboard Cite

show abstract

“…[58] This method enables to deposit uniform resistive switching layers without pinholes and it extends the application to practical large-scale memory devices that are compatible with complementary metal-oxide-semiconductor (CMOS) technology. However, the conventional solution process to fabricate OIP material cannot be used to deposit into nanometer scale template.…”

Section: D Oip Rerammentioning

confidence: 99%

“…[42][43][44][45] However, OIP-based photovoltaic device exhibits difference in current-voltage curve (hysteresis) under forward and reverse scanning directions which is undesirable in optoelectronic applications. [47][48][49][50][51][52][53][54][55][56][57][58][59][60][61] Moreover, OIPs are photosensitive, and this trait can be exploited in device with photon recording functionality. [47][48][49][50][51][52][53][54][55][56][57][58][59][60][61] Moreover, OIPs are photosensitive, and this trait can be exploited in device with photon recording functionality.…”

mentioning

confidence: 99%

Recent Advances in Memory Devices with Hybrid Materials

Hwang

Lee

2018

Adv Elect Materials

Self Cite

View full text Add to dashboard Cite

Increasing demands for information‐storage capacity and for miniaturization of memory cells have driven exploration of new‐generation data storage devices, because the conventional Si‐based memory technology is approaching its fundamental physical limits. Hybrid materials and novel device structure may lead to a paradigm shift toward memory devices that have high density, multifunctionality, and low power consumption. Here, the structure and operation mechanism of resistive switching memory devices are described, then recent advances in hybrid materials (e.g., graphene‐based polymer composites, organic–inorganic hybrid perovskite materials) for fabrication of these devices are summarized. How to increase the ON/OFF ratio and the density of memories, and to decrease programming voltage by selecting appropriate active materials, and engineering the active layers, are also demonstrated. Finally, the current challenges and future directions in memory devices based on hybrid materials are summarized.

show abstract

“…

…”

mentioning

confidence: 99%

Fully Printed Flexible Crossbar Memory Devices with Tip‐Enhanced Micro/Nanostructures

Pan

Zhang

et al. 2019

Adv Elect Materials

View full text Add to dashboard Cite

for goods, [5,6] which call the increased demands on high performance, miniaturization, [5,7,8] high density, [9][10][11][12] and low consumption. [7,13] Crossbar memory devices offer the promising potential for increasing the device density, since the advantaged layouts coordinate to the dimension shrinkage of memory devices. [8,10,12,14,15] With this layout, each crosspoint presents an independent memory unit, where stores binary information as high resistance states (HRS, 0 state) and low resistance states (LRS, 1 state). The key issue for read operations in crossbar memories is to separate HRS and LRS without overlapping depending on the microstructures of electrodes and interface. [16,17] Current microfabrication processes only extend directly to materials and architectures that can be patterned by the top-down strategy and depositionlithographic approaches. [12,[18][19][20] The interface uniformity at each crosspoint of crossbar is destroyed in these drastic fabrication processes, which seriously impacts the overall device performance. [20] Printed electronics contributes an efficient, diverse materials adoptability and multidimensional patterns manufacturing technology. [15,21,22] But the precision of the printing and the manipulability of the precise overlapping on the electrodes scarcely promise high integration and interface uniformity. [23][24][25] As for conventional crossbar memory devices with a planar shape, the large fluctuations of the resistance value are unavoidable from the stochastic and multiple formations of conductive filaments in a memory unit. [16] It was reported that the growth of conductive filaments is seriously affected by the local electrical fields. The pyramid-structured electrode improves the resistive switching characteristics via the tip-enhanced electric effect. [26,27] It is desirable to explore a continuous micro/nanofabrication strategy to achieve the nanoscale functional layer on the microstructured electrodes with high density and high performance.Here, we demonstrate a full printing strategy to fabricate Ag microwire/silk fibroin microwire/Ag microwire-based crossbar memory devices (minimum unit interval: 27 µm). In this work, triangular prism-structured Ag microwire electrode array can be printed at the nanoscale, which is the privileged structure for the switching process of the resistance memory devices. Conformal electrode/functional layer with the uniform interface can be well fabricated through regulating the conformal Flexible memory devices with optimal tip-enhanced structures and high density are necessary for data storage devices. Printed electronics combine an efficient manufacturing approach with diverse materials adoptability and multidimensional patterns. However, the precision of the printed structures and the nonuniform of the interfaces restrict the storage density and performance severely. A full printing strategy to fabricate crossbar memory devices with triangular prism-structured Ag microwire electrodes and Ag/silk fibroin conformal interlayers is r...

show abstract

A Strategy to Design High‐Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials

Cited by 149 publications

References 52 publications

Memristors with organic‐inorganic halide perovskites

Memristors with organic‐inorganic halide perovskites

Recent Advances in Memory Devices with Hybrid Materials

Fully Printed Flexible Crossbar Memory Devices with Tip‐Enhanced Micro/Nanostructures

Contact Info

Product

Resources

About