Charge transport and resistive switching in a 2D hybrid interface

Kumari, Karuna; Kumar, Ashutosh; Thakur, Ajay D.; Ray, S. J.

doi:10.1016/j.materresbull.2020.111195

Cited by 16 publications

(4 citation statements)

References 45 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This can be utilized to reset a resistive switching device. Both VCM and TCM have been demonstrated with 2D materials such as graphene oxide (GO) [ 138 ], tungsten diselenide (WS 2 ) [ 139 ], and hexagonal boron nitride (hBN) [ 140 ].…”

Section: Switching Mechanismsmentioning

confidence: 99%

Two-dimensional material-based memristive devices for alternative computing

Panisilvam,

Lee,

Byun

et al. 2024

Nano Convergence

View full text Add to dashboard Cite

Two-dimensional (2D) materials have emerged as promising building blocks for next generation memristive devices, owing to their unique electronic, mechanical, and thermal properties, resulting in effective switching mechanisms for charge transport. Memristors are key components in a wide range of applications including neuromorphic computing, which is becoming increasingly important in artificial intelligence applications. Crossbar arrays are an important component in the development of hardware-based neural networks composed of 2D materials. In this paper, we summarize the current state of research on 2D material-based memristive devices utilizing different switching mechanisms, along with the application of these devices in neuromorphic crossbar arrays. Additionally, we discuss the challenges and future directions for the field.

show abstract

Section: Switching Mechanismsmentioning

confidence: 99%

Two-dimensional material-based memristive devices for alternative computing

Panisilvam,

Lee,

Byun

et al. 2024

Nano Convergence

View full text Add to dashboard Cite

show abstract

“…39,40 However, self-healable metallohydrogels are still challenging for scientists. On the other hand, due to their superior memory properties, resistive random-access memory [41][42][43][44][45] (RRAM) devices offer a wide range of applications in switching, non-volatile memory design, neuromorphic computing, etc. In RRAM devices the switching can occur between the high and low resistance states.…”

Section: Introductionmentioning

confidence: 99%

A Zn(ii)-metal ion directed self-healing wide bandgap semiconducting supramolecular metallohydrogel: effective non-volatile memory design for in-memory computing

Roy,

Dhibar,

Karmakar

et al. 2024

Mater. Adv.

View full text Add to dashboard Cite

show abstract

“…However, CMOS scaling has reached its physical limit, and new technology needs to be developed to keep up the performance with great scalability, high speed, and low power consumption. Among the family of memory devices, nonvolatile memory (NVM) plays an important role and Resistive Random Access Memory , (RRAM) has received significant attention due to its simple architecture, smaller size, long write/read endurance ,, (>10 16 cycles), faster operating speed, excellent scalability (<10 nm), higher storage density, low cost, low power consumption, excellent compatibility etc. Most popular RRAM devices are transition metal oxide based − , but issues like presence of defects, interstitial impurities, grain boundary and polar discontinuity etc.…”

Section: Introductionmentioning

confidence: 99%

Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology

Roy,

Kumari,

Majumder

et al. 2024

ACS Appl. Bio Mater.

View full text Add to dashboard Cite

Organic material-based bioelectronic nonvolatile memory devices have recently received a lot of attention due to their environmental compatibility, simple fabrication recipe, preferred scalability, low cost, low power consumption, and numerous additional advantages. Resistive random-access memory (RRAM) devices work on the principle of resistive switching, which has the potential for applications in memory storage and neuromorphic computing. Here, natural organically grown orange peel was used to extract biocompatible pectin to design a resistive switching-based memory device of the structure Ag/Pectin/Indium tin oxide (ITO), and the behavior was studied between a temperature range of 10K and 300K. The microscopic characterization revealed the texture of the surface and thickness of the layers. The memristive current−voltage characteristics performed over 1000 consecutive cycles of repeated switching revealed sustainable bipolar resistive switching behavior with a high ON/OFF ratio. The underlying principle of Resistive Switching behavior is based on the formation of conductive filaments between the electrodes, which is explained in this work. Further, we have also designed a 2 × 2 crossbar array of RRAM devices to demonstrate various logic circuit operations useful for neuromorphic computing. The robust switching characteristics suggest possible uses of such devices for the design of ecofriendly bioelectronic memory applications and in-memory computing.

show abstract

Charge transport and resistive switching in a 2D hybrid interface

Cited by 16 publications

References 45 publications

Two-dimensional material-based memristive devices for alternative computing

Two-dimensional material-based memristive devices for alternative computing

A Zn(ii)-metal ion directed self-healing wide bandgap semiconducting supramolecular metallohydrogel: effective non-volatile memory design for in-memory computing

Eco-Friendly Biomemristive Nonvolatile Memory: Harnessing Organic Waste for Sustainable Technology

Contact Info

Product

Resources

About