Effect of Boron Impurity on the Raman Spectrum of Synthetic Diamond

Utyuzh, A. N.; Timofeev, Yu. A.; Rakhmanina, A. V.

doi:10.1023/b:inma.0000041323.35298.dd

Cited by 27 publications

(13 citation statements)

References 13 publications

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“…Based on the identified vacancy exchange mechanism, it is unlikely that boron atoms diffuse to non-substitutional sites, which is different from ion implantation induced case 30,39 . It is also noted that the realized boron doping concentration in our method is much lower than that realized in synthetic diamond 31,32 and therefore the likelihood of forming aggregated boron substitutional sites should be rather small.…”

Section: Resultsmentioning

confidence: 97%

“…In each case, diffused boron atoms from Si are expected to immediately become substitutional atoms in diamond if the diamond does not have pre-existing vacancy related defects (ideal situation). Since no vacancy defects are additionally generated in diamond during the diffusion process, a high temperature anneal that is necessary for post-implantation 38 then becomes unnecessary in such a doping process.Based on the identified vacancy exchange mechanism, it is unlikely that boron atoms diffuse to non-substitutional sites, which is different from ion implantation induced case 30,39 . It is also noted that the realized boron doping concentration in our method is much lower than that realized in synthetic diamond 31,32 and therefore the likelihood of forming aggregated boron substitutional sites should be rather small.…”

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confidence: 97%

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Thermal diffusion boron doping of single-crystal natural diamond

Seo

Mikael

et al. 2016

Journal of Applied Physics

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Abstract:With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occur at the bonded interface between Si and diamond.We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.With the advent of various new renewable energy sources and the emerging need to deliver and convert energy more efficiently, power electronics have received unprecedented attention in recent years. For the last several decades, Si-based power devices have played a dominant role in power conversion electronics. Wide bandgap semiconductor material based power electronics, such as those employing GaN and SiC, are expected to handle more power with higher efficiency than Si-based ones. GaN exhibits higher saturation velocity than Si. However, the thermal conductivity of GaN is low for power conversion systems. Moreover, it is currently difficult to obtain a thick and high quality GaN layer. SiC has its own native substrate, but it has inferior performance matrices (e.g., Johnson's figure of merit) versus GaN. In comparison, diamond exhibits most of the critical material properties for power electronics, except for its small substrate size at present. Diamond has a wide bandgap, high critical electric field, high carrier mobility, high carrier saturation velocities and the highest thermal conductivity among all available semiconductor materials [1][2][3] . Due to its superior electrical properties, the thickness of the highest quality diamond required to block an equivalent amount of voltage is approximately onefifth to one-fourth the thicknesses of GaN or SiC. In particular, the superior thermal conductivity of diamond could greatly simplify the design of heat dissipation and hence simplify entire power electronics modules. Therefore, diamond is considered the best material candidate for power electronics in terms of power switching efficiency, reliability, and system volume and weight.However, besides the lack of large ar...

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Section: Resultsmentioning

confidence: 97%

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confidence: 97%

Thermal diffusion boron doping of single-crystal natural diamond

Seo

Mikael

et al. 2016

Journal of Applied Physics

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“…Apart from that, 2 wide bands at around 500 and 1200 cm À1 are observed, which can be assigned to boron-dimer vibrations and symmetry breaking of the diamond lattice. 20 Additional information on the quality of the grown diamond is obtained from the region between 1400 and 1600 cm À1 , where the G-band assigned to sp 2 -carbon impurities is observed. Depending on the thickness of the diamond lm, the signals from the underlying silicon are different in intensity, decreasing with deposited lm thickness.…”

Section: Characterisationmentioning

confidence: 99%

“…The dopant concentration can be estimated using the Fano-resonance caused by the boron incorporation. 19,20 In a similar approach and in order to provide a fast, nondestructive and non-invasive method for the detection of both, the boron concentration and the thickness of thin boron doped diamond layers grown on IR transparent samples like silicon, we have developed a chemometric method based on partial least squares regression (PLSR) using Raman spectra of the as-grown diamond layers. 21,22 For this purpose, a set of diamond lms was grown and characterised by SIMS measurements.…”

Section: Introductionmentioning

confidence: 99%

Characterisation of thin boron-doped diamond films using Raman spectroscopy and chemometrics

et al. 2019

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“…The majority of studies on the Fano-shaped diamond peak reports a negative value for the Fano asymmetric parameter (q) [1][2][3][4][5][6][7]. Other authors reported positive values of the Fano asymmetric parameter in layers [2,8,9] with boron concentrations close to the metal-insulator transition (Mott transition). The origin of other Raman peaks is subject to discussion.…”

Section: Introductionmentioning

confidence: 99%

Analysis of heavily boron-doped diamond Raman spectrum

Mortet

Taylor

Živcová

et al. 2018

Diamond and Related Materials

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Lattice disorder, electronic Raman scattering, and Fano interaction effects are at the genesis of the Raman spectrum of heavily boron-doped diamond. However, no accurate unified description of this spectrum has been reported yet. In this work, we propose a novel analysis of the Raman spectrum of boron-doped diamond based on classical models of electronic Raman scattering and Fano effect. This new analysis shows that the Raman spectrum of boron-doped diamond results from the combination of electronic Raman scattering and its interaction, i.e. Fano effect, with the diamond phonon density of states and it confirms the 500 cm −1 and 1200 cm −1 bands originate from the phonon density of states.

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Effect of Boron Impurity on the Raman Spectrum of Synthetic Diamond

Cited by 27 publications

References 13 publications

Thermal diffusion boron doping of single-crystal natural diamond

Thermal diffusion boron doping of single-crystal natural diamond

Characterisation of thin boron-doped diamond films using Raman spectroscopy and chemometrics

Analysis of heavily boron-doped diamond Raman spectrum

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