Neural micro-electrode arrays that are transparent over a broad wavelength spectrum from ultraviolet to infrared could allow for simultaneous electrophysiology and optical imaging, as well as optogenetic modulation of the underlying brain tissue. The long-term biocompatibility and reliability of neural micro-electrodes also require their mechanical flexibility and compliance with soft tissues. Here we present a graphene-based, carbon-layered electrode array (CLEAR) device, which can be implanted on the brain surface in rodents for high-resolution neurophysiological recording. We characterize optical transparency of the device at >90% transmission over the ultraviolet to infrared spectrum and demonstrate its utility through optical interface experiments that use this broad spectrum transparency. These include optogenetic activation of focal cortical areas directly beneath electrodes, in vivo imaging of the cortical vasculature via fluorescence microscopy and 3D optical coherence tomography. This study demonstrates an array of interfacing abilities of the CLEAR device and its utility for neural applications.

Digital image sensors in hemispherical geometries offer unique imaging advantages over their planar counterparts, such as wide field of view and low aberrations. Deforming miniature semiconductor-based sensors with high-spatial resolution into such format is challenging. Here we report a simple origami approach for fabricating single-crystalline silicon-based focal plane arrays and artificial compound eyes that have hemisphere-like structures. Convex isogonal polyhedral concepts allow certain combinations of polygons to fold into spherical formats. Using each polygon block as a sensor pixel, the silicon-based devices are shaped into maps of truncated icosahedron and fabricated on flexible sheets and further folded either into a concave or convex hemisphere. These two electronic eye prototypes represent simple and low-cost methods as well as flexible optimization parameters in terms of pixel density and design. Results demonstrated in this work combined with miniature size and simplicity of the design establish practical technology for integration with conventional electronic devices.

Transparent graphene-based neural electrode arrays provide unique opportunities for simultaneous investigation of electrophysiology, various neural imaging modalities, and optogenetics. Graphene electrodes have previously demonstrated greater broad-wavelength transmittance (∼90%) than other transparent materials such as indium tin oxide (∼80%) and ultrathin metals (∼60%). This protocol describes how to fabricate and implant a graphene-based microelectrocorticography (μECoG) electrode array and subsequently use this alongside electrophysiology, fluorescence microscopy, optical coherence tomography (OCT), and optogenetics. Further applications, such as transparent penetrating electrode arrays, multi-electrode electroretinography, and electromyography, are also viable with this technology. The procedures described herein, from the material characterization methods to the optogenetic experiments, can be completed within 3-4 weeks by an experienced graduate student. These protocols should help to expand the boundaries of neurophysiological experimentation, enabling analytical methods that were previously unachievable using opaque metal-based electrode arrays.

Directed self-assembly of block copolymers is a scalable method to fabricate well-ordered patterns over the wafer scale with feature sizes below the resolution of conventional lithography. Typically, lithographically-defined prepatterns with varying chemical contrast are used to rationally guide the assembly of block copolymers. The directed self-assembly to obtain accurate registration and alignment is largely influenced by the assembly kinetics. Furthermore, a considerably broad processing window is favored for industrial manufacturing. Using an atomically-thin layer of graphene on germanium, after two simple processing steps, we create a novel chemical pattern to direct the assembly of polystyrene-block-poly(methyl methacrylate). Faster assembly kinetics are observed on graphene/germanium chemical patterns than on conventional chemical patterns based on polymer mats and brushes. This new chemical pattern allows for assembly on a wide range of guiding periods and along designed 90° bending structures. We also achieve density multiplication by a factor of 10, greatly enhancing the pattern resolution. The rapid assembly kinetics, minimal topography, and broad processing window demonstrate the advantages of inorganic chemical patterns composed of hard surfaces.

Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-Cut TM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-Cut TM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-Cut TM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

A simple and viable method was developed to produce biaxial strain in monolayer graphene on an array of SiO2 nanopillars. The array of SiO2 nanopillars (1 cm2 in area, 80 nm in height, and 40 nm in pitch) was fabricated by employing self-assembled block copolymer through simple dry etching and deposition processes. According to high resolution micro-Raman spectroscopy and atomic force microscopy analyses, 0.9% of maximum biaxial tensile strain and 0.17% of averaged biaxial tensile strain in graphene were created. This technique provides a simple and viable method to form biaxial tensile strain in graphene and offers a practical platform for future studies in graphene strain engineering.

Abstract:With the best overall electronic and thermal properties, single crystal diamond (SCD) is the extreme wide bandgap material that is expected to revolutionize power electronics and radio-frequency electronics in the future. However, turning SCD into useful semiconductors requires overcoming doping challenges, as conventional substitutional doping techniques, such as thermal diffusion and ion implantation, are not easily applicable to SCD. Here we report a simple and easily accessible doping strategy demonstrating that electrically activated, substitutional doping in SCD without inducing graphitization transition or lattice damage can be readily realized with thermal diffusion at relatively low temperatures by using heavily doped Si nanomembranes as a unique dopant carrying medium. Atomistic simulations elucidate a vacancy exchange boron doping mechanism that occur at the bonded interface between Si and diamond.We further demonstrate selectively doped high voltage diodes and half-wave rectifier circuits using such doped SCD. Our new doping strategy has established a reachable path toward using SCDs for future high voltage power conversion systems and for other novel diamond based electronic devices. The novel doping mechanism may find its critical use in other wide bandgap semiconductors.With the advent of various new renewable energy sources and the emerging need to deliver and convert energy more efficiently, power electronics have received unprecedented attention in recent years. For the last several decades, Si-based power devices have played a dominant role in power conversion electronics. Wide bandgap semiconductor material based power electronics, such as those employing GaN and SiC, are expected to handle more power with higher efficiency than Si-based ones. GaN exhibits higher saturation velocity than Si. However, the thermal conductivity of GaN is low for power conversion systems. Moreover, it is currently difficult to obtain a thick and high quality GaN layer. SiC has its own native substrate, but it has inferior performance matrices (e.g., Johnson's figure of merit) versus GaN. In comparison, diamond exhibits most of the critical material properties for power electronics, except for its small substrate size at present. Diamond has a wide bandgap, high critical electric field, high carrier mobility, high carrier saturation velocities and the highest thermal conductivity among all available semiconductor materials [1][2][3] . Due to its superior electrical properties, the thickness of the highest quality diamond required to block an equivalent amount of voltage is approximately onefifth to one-fourth the thicknesses of GaN or SiC. In particular, the superior thermal conductivity of diamond could greatly simplify the design of heat dissipation and hence simplify entire power electronics modules. Therefore, diamond is considered the best material candidate for power electronics in terms of power switching efficiency, reliability, and system volume and weight.However, besides the lack of large ar...

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