Analysis of heavily boron-doped diamond Raman spectrum

Abstract

Lattice disorder, electronic Raman scattering, and Fano interaction effects are at the genesis of the Raman spectrum of heavily boron-doped diamond. However, no accurate unified description of this spectrum has been reported yet. In this work, we propose a novel analysis of the Raman spectrum of boron-doped diamond based on classical models of electronic Raman scattering and Fano effect. This new analysis shows that the Raman spectrum of boron-doped diamond results from the combination of electronic Raman scattering and its interaction, i.e. Fano effect, with the diamond phonon density of states and it confirms the 500 cm −1 and 1200 cm −1 bands originate from the phonon density of states.

Effect of Boron Doping on Diamond Film and Electrochemical Properties of BDD According to Thickness and Morphology

“…This is manifested by impurities and defects as a result of relaxation of wave vector selection rules due to disorders [30][31][32][33]. Ushizawa and Mortet also note that when boron is doped with diamond, a broad peak at 490 cm −1 is also observed due to interference between continuous electron excitation and the center optic phonon in the discontinuous region [29][30][31][32][33]. Thus, the Raman spectrum in Figure 5b,c indicates that boron was successfully doped into the diamond film.…”

“…Regarding this mismatch between the FE-SEM image and the Raman spectra, Ushizawa [23] and Mortet [29] found that when boron doping was higher than 400 ppm, the characteristic peak of the diamond changed. The diamond characterization peak gradually decreases, shifting to a lower frequency, and changes to a broader peak.…”

Comparison of ohmic contact formation of titanium and zirconium on boron doped diamond

“…1230 cm -1 . Small structures at 610 cm -1 and 1050 cm -1 attributed to boron-carbon vibrations and carbon vibrations [6] are observed on layers grown on (100) oriented substrates with lower boron concentrations. While the origin of the wide band at 500 cm -1 remains an open question, the peak at 1230 cm -1 has been recently attributed to a Fano-shaped diamond maximum phonon density of states [6].…”

“…Small structures at 610 cm -1 and 1050 cm -1 attributed to boron-carbon vibrations and carbon vibrations [6] are observed on layers grown on (100) oriented substrates with lower boron concentrations. While the origin of the wide band at 500 cm -1 remains an open question, the peak at 1230 cm -1 has been recently attributed to a Fano-shaped diamond maximum phonon density of states [6]. Figure 2 compares the current voltage (I-V) characteristics measured at room temperature of a 35 μm gap c-TLM test structure of titanium and zirconium contacts on doped diamond layers deposited with various B/C ratio after different annealing processes: after metal deposition, i.e.…”

Signatures of free carriers in Raman spectra of cubic In2O3

“…This kind of spectral features have been observed previously in Raman spectra of different degenerately doped semiconductors. [9][10][11][12][13][14][15]18,19 The broad band is commonly attributed to electronic excitations in the conduction band. 5,6 The Raman peak of such single-particle intraband excitations generally extends over the frequency range 0 < ω < qv F , where q is the wavevector transferred during the Raman scattering process and v F is the Fermi velocity.…”