Dry etching properties of boron carbon nitride (BCN) films using carbon fluoride gas

Aoki, Hidemitsu; Tokuyama, Shinji; Sasada, Takashi; Watanabe, Daisuke; Mazumder, M.K.; Kimura, Chiharu; Sugino, Takashi

doi:10.1016/j.diamond.2008.01.062

Cited by 11 publications

(2 citation statements)

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“…According to Aoki, boron trifluoride produced by reaction between boron element and CF 4 was reported to be sublimated accompanied by occurrence of byproducts, which can be expressed by the equation (4). 28) Therefore, the byproducts observed in the microstructure after corrosion test of the glasses with BS and CAS compositions are considered to remain in the fluorides such as NaF, AlF 3 , etc. together with the reaction products of CF x polymer type due to the reaction of equation 4.…”

Section: Resultsmentioning

confidence: 99%

mCharacteristics of Carbon Tetrafluoride Plasma Resistance of Various Glasses

Choi

Han

Lee

et al. 2016

J. Korean Ceram. Soc

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Etch rate, surface roughness and microstructure as plasma resistance were evaluated for six kinds of oxide glass with different compositions. Borosilicate glass (BS) was found to be etched at the highest etch rate and zinc aluminum phosphate glass (ZAP) showed a relatively lower etch rate than borosilicate. On the other hand, the etching rate of calcium aluminosilicate glass (CAS) was measured to be similar to that of sintered alumina while yttrium aluminosilicate glass (YAS) showed the lowest etch rate. Such different etch rates by mixture plasma as a function of glass compositions was dependent on whether or not fluoride compounds were formed on glass and sublimated in high vacuum. Especially, in view that CaF 2 and YF 3 with high sublimation points were formed on the surface of CAS and YAS glasses, both CAS and YAS glasses were considered to be a good candidate for protective coating materials on the damaged polycrystalline ceramics parts in semiconductor and display processes.

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Section: Resultsmentioning

confidence: 99%

mCharacteristics of Carbon Tetrafluoride Plasma Resistance of Various Glasses

Choi

Han

Lee

et al. 2016

J. Korean Ceram. Soc

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“…This is primarily a result of their high optical transparency and strong resistance to fluorine based dry etches. 37,264 Similarly, boron-based dielectrics have also gained significant interest as alternative or complementary hard masking materials 265,266 due to their significant dry etch rates in fluorine-based chemistries, 37,219,267 low wet etch rates in dilute HF, 223,268 and tunable bi-axial film stress 37 and mechanical properties. 264,269 The high resistance of high-k oxides and nitrides to fluorinated plasma chemistries has also led to significant interest for etch stopping applications in the final pattern transfer to the target material.…”

Section: Color Technology and The Four-color Problemmentioning

confidence: 99%

Review—Beyond the Highs and Lows: A Perspective on the Future of Dielectrics Research for Nanoelectronic Devices

Jenkins

Austin

Conley

et al. 2019

ECS J. Solid State Sci. Technol.

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High-dielectric constant (high-k) gate oxides and low-dielectric constant (low-k) interlayer dielectrics (ILD) have dominated the nanoelectronic materials research scene over the past two decades, but they have recently reached a state of maturity and perhaps the limits of their scaling. Based on this, there is a need for a systematic review summarizing not only the historic research and achievements on high-k and low-k dielectrics, but also emerging device applications as well as an outlook of future challenges. We begin by first reviewing the factors that drove the emergence of low-k and high-k materials in nanoelectronics as ILD and gate dielectric materials, respectively, and the challenges and limits these materials ultimately approached in terms of permittivity scaling. We then illustrate that gate dielectric and ILD applications represent just a small fraction of the numerous dielectrics utilized in present day nanoelectronic products where permittivity scaling is now being increasingly demanded for materials such as dielectric spacers, trench isolation, and etch stopping layers. We conclude by examining the numerous new applications for dielectric materials that are emerging as the semiconductor industry transitions to novel patterning schemes, prepares for life post CMOS scaling, and explores ways to natively embed device functionality in the metal interconnect. For the former, we specifically examine the “colorful” requirements for the various enabling dielectric hardmask and spacer materials utilized in pitch division-multi-pattern processes and then discuss the role that selective area deposition of dielectrics and metals could play in reducing the complexity of such patterning processes. For the latter, we review the use of both high-k and low-k dielectrics in various metal-insulator-metal (MIM) structures as Fermi level de-pinning layers, tunnel diodes, and back-end-of-line (BEOL) compatible capacitive and resistive switching random access memory (ReRAM) elements. We further examine how dielectrics can hinder or aid new forms of computing such as quantum and neuromorphic in reaching their full potential. In conclusion, we find that while the field of dielectrics has a long history, it remains vibrant with numerous exciting new and old research vectors awaiting further exploration.

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