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We have investigated the effect of a magnetic field on an electroplated Ni79Fe21 film. We have succeeded in the formation of a Ni79Fe21 (permalloy) film with high permeability by applying the magnetic field vertical to the electric field during the electroplating process. In a conventional NiFe electroplating process, annealing is required to obtain a stable Ni79Fe21 film after electroplating. This process without annealing is useful for fabricating Ni79Fe21 films for flexible devices and complementary metal oxide semiconductor (CMOS) integration.

Articles you may be interested inEffect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system J. Appl. Phys. 115, 084308 (2014); 10.1063/1.4866995Low threshold field emission from high-quality cubic boron nitride films J. Appl. Phys. 111, 093728 (2012); 10.1063/1.4711093Effect of cubic phase evolution on field emission properties of boron nitride island films An individual multiwall carbon nanotube ͑CNT͒ synthesized without a catalyst by an arc discharge method is bonded to a tungsten tip. Field emission characteristics of the individual CNT coated with a boron nitride ͑BN͒ nanofilm are investigated. The BN film is synthesized by plasma-assisted chemical vapor deposition method in which boron trichloride ͑BCl 3 ͒ and nitrogen ͑N 2 ͒ are used as source gases. Deposition of the BN film with a thickness less than 10 nm onto the individual CNT is attempted. Field emission characteristics are measured in the chamber evacuated to 2 ϫ 10 −8 Pa. An anode electrode is set 25 mm away from the CNT sample. The turn-on electric field, designated as an electric field at an emission current of 1.0 nA, is compared between individual CNTs with and without the BN nanofilm. A significant reduction in the turn-on electric field is achieved by coating with the BN nanofilm. The turn-on electric field is estimated to be 1.2ϫ 10 −2 V / m for the uncoated individual CNT sample, and the turn-on electric field is estimated to be 8.2ϫ 10 −3 V / m for the CNT sample coated with BN nanofilm. Moreover, stable operation is demonstrated at an emission current as high as 1 ϫ 10 −5 A.

We investigate inductively coupled plasma deep dry etching of Al0.8Ga0.2As for photonic crystal (PC) fabrication using Cl2, BCl3, and CH4 chemistry. The characteristic AlO x deposition is observed during the etching, resulting in the reduction of etching rate. BCl3 is considered to scavenge the deposited AlO x by its reductive reaction. CH4 passivates the etching sidewall, as well as enhances the deposition of AlO x . Concerning the impact of pattern size, a pronounced inverse reactive ion etching (RIE) lag is observed, which is beneficial for small-size PC fabrication typically with a hole diameter of 100–500 nm. From the findings, we successfully fabricated a PC structure with air holes having an aspect ratio of 8 and a diameter of 110 nm.

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