Thermal oxidation temperature dependence of 4H-SiC MOS interface

High-Temperature (1200–1400°C) Dry Oxidation of 3C-SiC on Silicon

“…[6][7][8][9][10] Recent reports on high-temperature oxidation of 4H-SiC have shown that this process could be beneficial for the 4H-SiC/SiO 2 interface. [11][12][13][14] It has been reported 12 that as-grown 4H-SiC oxidized at 1500°C resulted in a 4H-SiC MOSFET with maximum field-effect mobility of 40 cm 2 /V s; here we investigate a similar effect for the 3C-SiC/SiO 2 interface. In this study, the highest temperature used for oxidation of 3C-SiC was 1400°C, because of the limit imposed by the melting point of Si (1414°C).…”

Mercaptosuccinic acid modified silicon particle inks: Production, structural, and electrical characterizations

“…The peak can be deconvoluted with at least two peaks centered at 99.5 and 101.3 eV as shown by the red dashed curves. It has been reported that the Si 2p peak for pure Si is at 99.5 eV [31] and that the chemical shifts due to SiC [32], SiS 2 [33], and SiO 2 [34] formations are +0.9, +3.9, and +3.9 eV, respectively. In the present experiment, the chemical shift due to SiO x formation seems to be almost negligible because, according to the FTIR results, the particles have few Si-O bonds (A small shoulder between 103 and 104 eV in Fig.…”

Growth and surface analysis of SiO2 on 4H-SiC for MOS devices

“…As we can see, this surface is virtually different from the virgin C-face 4H-SiC substrate [22]. It could be due to non-etchable nano-islands of C related compound structures such as ␣-CH or SiO x C y clusters [30]. The former is highly chemical resistant to HF, which has been used as a mask to etch SiO 2 layers [29].…”