Dose gradient assessment at the new CERN CHARM irradiation facility

Infantino, Angelo; Cangialosi, C.; Brucoli, M.; Brügger, M.; Saraiva, J. de Carvalho; Danzeca, Salvatore

doi:10.1016/j.radphyschem.2018.09.001

Cited by 9 publications

(10 citation statements)

References 14 publications

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“…CHARM is a mixed radiation field facility dedicated to the testing of electronic components, which is described in detail in [16]- [18]. Typically operating with protons, different target configurations are employed to generate a mixed radiation field in the facility.…”

Section: A Charmmentioning

confidence: 99%

Single Event Effect Testing With Ultrahigh Energy Heavy Ion Beams

Kastriotou

Wyrwoll

Bernhard

et al. 2020

IEEE Trans. Nucl. Sci.

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Single event effect (SEE) testing with ultrahigh energy (UHE) heavy ions, such as the beams provided at CERN, presents advantages related to their long ranges with a constant linear energy transfer value. In the present work, the possibility to test components in parallel is being examined, and results from the CERN 2018 UHE Pb test campaigns are studied. Furthermore, the generation of multibit upsets by the UHE Pb ions is evaluated, and the contribution of possible fragments to the SEE measurements is discussed.

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Section: A Charmmentioning

confidence: 99%

Single Event Effect Testing With Ultrahigh Energy Heavy Ion Beams

Kastriotou

Wyrwoll

Bernhard

et al. 2020

IEEE Trans. Nucl. Sci.

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“…It is suggested that high radiations can induce positive oxide traps in the SiO 2 layer, whereas the electrons can be trapped within the interface of the SiO 2 and WSe 2 layers. [ 88 ] J. Shin et al. further confirmed the WSe 2 sample stability through various characterizations since they observed no considerable change after proton irradiation.…”

Section: Radiation Effect On Thin Films Transistor (Tft)mentioning

confidence: 92%

“…Except for some X-rays and β (e − or e + ) are produced for industrial and medical prospects, conceivable harmful radiation rays (α, β, and γ) are emitted from radioactive materials, such as uranium, thorium, and other derivatives. [85,86] Most high-energy particles and photons are radiated in Large Hadron Collider (LHC) in particle accelerators, [87][88][89][90] and α, β, n 0, and γ-rays are produced in power plant facilities from a nuclear reaction. [91][92][93] Atmospheric belts and earth magnetic fields play an important role in trapping radiations into the Van Allen belts away from the earth's surface.…”

Section: Radiation Sources: Types and Radiation Effectsmentioning

confidence: 99%

Radiation‐Tolerant Electronic Devices Using Wide Bandgap Semiconductors

Muhammad

Wang

Zhang

et al. 2022

Adv Materials Technologies

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These energetic particles, such as electrons, protons, neutrons, X-rays, or gamma rays, induced damage in materials (used in electronic devices) through total ionization and displacement, [4] which would affect the reliability of the electronic devices. [5][6][7] Electronics failure occurs in harsh and inaccessible environments through various paths, such as electromagnetic waves, nuclear reactions, and high-frequency communications systems. Therefore, the radiationhardened requirements of the deployed electronic technology depend on the specific high-energy photons and particles in the radiation environment. For example, Mars exploration requires a special proton anti-radiation in electronics. At the same time, the safety supervision and inspection of the contaminated nuclear area are suggested to be equipped with high resilience towards the alpha, beta, and gamma rays. The development of radiation-hard electric circuits over the years has led researchers to consider the application of functional anti-irradiation material to devices. The current focus is on developing complementary metal-oxide semiconductors (CMOS) with wide bandgap semiconductors (WBGs), which are well suited to large-area aerospace applications. [8][9][10] As shown in Figure 1, a notable material class of WBGs can be listed as metal oxides (MOS), transition-metal dichalcogenides (TMDs), silicon carbide, gallium nitride, and others. WBGs materials contribute robust properties under harsh conditions due to their strong electronic compliance, high-temperature competence, and strong atomic bond energy. [11][12][13][14][15][16] They have been proposed as favorable materials for aerospace and other radiation-hardened applications. Generally, the bandgap in the semiconductor reflects the extra energy that a valence electron must access to become a free electron. Its large bandgap of more than 3 eV guarantees inherent reliability in the semiconductors, providing transparency for the low-energy photons. The large, spherical nsorbitals in the conduction band (CB) of MOS also play a critical role in high dopability for hosting a high density of electrons, leading to the remarkably tolerance to various radiation fluences. [17][18][19][20][21][22][23][24][25][26][27][28][29][30][31][32][33][34][35] Understanding the apparent immunity of the WBGs to various radiation environments and radiation-hard electronic engineering would be critical for pushing the technology further and understanding its limitations. Efforts to address these issues have been underway over the past two decades. Substantial progress has also been made in designing radiation-hard thin films transistors (TFTs) with ZnO, Ga 2 O 3 , In 2 O 3 , SnO 2 , IGZO, SiC, GaN, and many other WBGs, The aspiration of electronic technologies that are resistant to high-energy cosmic radiation is essential for current harsh radiation environment exploration. Integrated circuits mostly require post-processing after designing, making their structures more complex than the standard systems. Thus, unique de...

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“…T HE European Organization for Nuclear Research (CERN) hosts the CERN high-energy accelerator mixed-field facility (CHARM) [1], [2], which provides a complex mixed radiation field similar to that present in the LHC accelerator and its surroundings. Its multiple applications include the characterization of electronic devices and the calibration of radiation detectors.…”

Section: Introductionmentioning

confidence: 99%