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Abstract-The High-Luminosity Large Hadron Collider (HL-LHC) is a novel machine configuration which will rely on a number of key innovative technologies to enhance the performance of the present LHC machine as of 2025. The upgrade will also involve increased radiation levels which need to be predicted by combining scaled measurements and calculations in order to define the qualification requirements for electronic systems. In this work we describe such levels first of all by introducing the monitoring and calculation approaches used for the present LHC machine, and secondly by applying scaling factors and dedicated simulations for the future HL-LHC accelerators. We present the levels according to the different areas relevant for the operation of electronics-based equipment, and discuss the associated Radiation Hardness Assurance implications.

Traditional heavy-ion testing for single-event effects is carried out in cyclotron facilities with energies around 10 MeV/n. Despite their capability of providing a broad range of linear energy transfer (LET) values, the main limitations are related to the need of testing in a vacuum and with the sensitive region of the components accessible to the low range ions. In this paper, we explore the use of ultrahigh energy (UHE) (5-150 GeV/n) ions in the CERN accelerator complex for radiation effects on electronics testing. At these energies, we show, both through simulations and experimental data, the significant impact of the ion energy on the ionization track structure and associated volume-restricted LET value, highlighting the possible limitations for radiation hardness assurance for highenergy accelerator applications. In addition, we show that from a nuclear interaction perspective, UHE ions behave similar to protons independently of their significantly larger mass.

Accelerated terrestrial neutron irradiations were performed on different commercial SiC power MOSFETs with planar, trench and double-trench architectures. The results were used to calculate the failure cross-sections and the failure in time (FIT) rates at sea level. Enhanced gate and drain leakage were observed in some devices which did not exhibit a destructive failure during the exposure. In particular, a different mechanism was observed for planar and trench gate MOSFETs, the first showing a partial gate rupture with a leakage path mostly between drain and gate, similar to what was previously observed with heavy-ions, while the second exhibiting a complete gate rupture. The observed failure mechanisms and the post irradiation gate stress (PIGS) tests are discussed for the different technologies.

The energy deposition spectra in a silicon detector have been measured at chip irradiation (ChipIr) and Cern High energy AcceleRator Mixed field (CHARM) facilities. The measurement was possible thanks to a fast electronic chain that can cope with high instantaneous fluxes. A computational study of the energy deposition in a silicon detector allows for the comparison of high-energy spallation facilities dedicated to the irradiation of microelectronics and for the validation of radiation transport models. The measured time structure of the facilities pulses is also presented with an example on how to use this result to correct in the case of large dead times (DTs).