Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy

Abstract

Device quality (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time. Angling of the substrate to expose stable, Ga-rich ledges on the (110) surface has been shown to be the necessary condition for two-dimensional growth. The layers exhibit a room-temperature electron mobility of ∼5700 cm2/V s for NSi∼4×1015 and a strong exciton photoluminescence emission at 4 K. This breakthrough in MBE growth of III-V compounds allows for fabrication of (110) GaAs devices which will take advantage of the unique properties of this orientation.

Review Article: Molecular beam epitaxy of lattice-matched InAlAs and InGaAs layers on InP (111)A, (111)B, and (110)

“…1(c)]. To avoid hillock formation, many groups have adopted the use of offcut substrates, which promote step flow growth rather than 3D islanding, 58,[65][66][67][68] but the optimization of growth conditions is seldom reported, and smooth growth remains challenging. [69][70][71] Furthermore, much of the early work on (110) and (111) growth was performed prior to widespread availability of commercial AFMs and so morphology studies were often limited to optical microscopy.…”

“…101 The problem of hillocks was thus resolved by using an offcut 6 toward the (111)A facet. 68 Subsequently, the same offcut technique has been used to achieve smooth InGaAs, InAlAs, InGaAsP, and InP on InP(110). 38,64,102,103 For growth on exact (110) surfaces, Zhou et al reported that by using relatively low growth rate, high V/III ratio, and low T g of 470-500 C, they could create AlGaAs/GaAs(110) heterostructures with sufficiently good interface quality to form a high l n 2D electron gas (2DEG).…”

Correlation between morphology and electron spin relaxation time in GaAs/AlGaAs quantum wells on misoriented GaAs(110) substrates

“…Allen et al reported device quality growth on a 6 -misoriented GaAs(110) substrate using a growth condition similar to that for conventional GaAs(001) substrates (As/Ga ratio of 15 and growth temperature of 570 C). 9 Using misoriented (110) substrates creates wider MBE growth condition windows, 10 and high growth temperature is favorable because low growth temperature can cause the formation of unfavorable nonradiative recombination centers resulting from the incorporation of unintentional impurities. However, deviation of the substrate orientation away from (110) might weaken the significant feature of (110) QWs, i.e., the suppression of the DP spin relaxation.…”

Growth and surface passivation of near-surface InGaAs quantum wells on GaAs (110)

“…Epitaxial growth of bulk [4][5][6] and QW [7,8] structures on GaAs (1 1 0) substrates by molecular beam epitaxy (MBE) has been reported in detail before. In all these studies the surface structure was found to be faceted with triangular shaped islands having surface densities of approximately 10 6 cm À2 [6].…”