Growth and surface passivation of near-surface InGaAs quantum wells on GaAs (110)

Aierken, Abuduwayiti; Hakkarainen, Tuula; Tiilikainen, Jouni; Mattila, Marco; Riikonen, Juha; Sopanen, Markku; Lipsanen, Harri

doi:10.1016/j.jcrysgro.2007.09.016

Cited by 6 publications

(5 citation statements)

References 23 publications

(26 reference statements)

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“…[23] Here, we would also like to note that InP capping layers have been shown to remain stable for several months after initial decrease in PL intensity, in both GaAs NWs and near-surface quantum wells, and therefore, the InP-capped NWs in this study are believed to remain similarly stable. [24][25][26] Figure 3b shows macro-PL spectra from Zn-doped GaAs NWs to study 1) large ensemble of NWs on plastic and 2) doped NWs that are relevant to optoelectronic device structures. The PL peak is redshifted from the peak wavelength of undoped NWs due to Zn doping.…”

Section: Resultsmentioning

confidence: 99%

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Direct GaAs Nanowire Growth and Monolithic Light‐Emitting Diode Fabrication on Flexible Plastic Substrates

Khayrudinov

Sorokina

Raj

et al. 2022

Advanced Photonics Research

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The growth of self‐catalyzed GaAs nanowires (NWs) and monolithic light‐emitting diode (LED) directly on flexible plastic substrates is reported. Dense GaAs NW forest is attained in self‐catalyzed mode using metalorganic vapor phase epitaxy. The NWs are shown to be crystalline with a zinc‐blende phase. The optical properties of the GaAs NWs are found to be promising in both photoluminescence emission and light‐trapping based on reflectance and transmittance measurements. The LED is fabricated from p‐type NWs by depositing Au as Ohmic contact and TiO2/ITO as an electron‐selective contact. The demonstrated NW growth and LED fabrication represent a significant step toward low‐cost, industrially feasible flexible III–V NW optoelectronic applications, as plastic is inexpensive, and the fabrication steps are compatible with roll‐to‐roll processing.

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Section: Resultsmentioning

confidence: 99%

“…[ 23 ] Here, we would also like to note that InP capping layers have been shown to remain stable for several months after initial decrease in PL intensity, in both GaAs NWs and near‐surface quantum wells, and therefore, the InP‐capped NWs in this study are believed to remain similarly stable. [ 24–26 ]…”

Section: Resultsmentioning

confidence: 99%

Direct GaAs Nanowire Growth and Monolithic Light‐Emitting Diode Fabrication on Flexible Plastic Substrates

Khayrudinov

Sorokina

Raj

et al. 2022

Advanced Photonics Research

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“…This method has been previously used on near-surface quantum wells with enhancements of photoluminescence (PL) intensity up to four orders of magnitude and with good stability. [13][14][15] The passivation in this method results primarily from reduced surface recombination velocity, 16 which is over three orders of magnitude faster in GaAs NWs than in InP NWs. 6 We show that this technique is suitable for GaAs nanowires as well, with enhancements in PL reaching three orders of magnitude and with good stability.…”

Section: Strong Surface Passivation Of Gaas Nanowires With Ultrathin mentioning

confidence: 99%

“…The PL intensity has been observed to drop faster with phosphidization in earlier research as well. 15 Therefore, 1-3 s InP passivation is optimal for the best enhancement in PL and for a stable passivation, while phosphidization suffices when no long term stability is required. Regarding the passivation temperature, 470 C-550 C provided the strongest passivation effect, whereas the PL intensity dropped at 600 C-650 C. Since the temperatures 470 C-550 C and different passivation times resulted in nearly equally strong passivation, we conclude the method to be quite insensitive to changes in growth parameters.…”

Section: -mentioning

confidence: 99%

Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers

Haggrén

Jiang

Kakko

et al. 2014

Applied Physics Letters

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“…GaAs has a high surface recombination velocity, and surface passivation is critical for efficient devices . Phosphide-based materials have been shown to provide robust passivation already with only a few nanometers thick layer, ,, and therefore, group III-phosphide materials are used here. Two different passivation materials are studied.…”

Section: Resultsmentioning

confidence: 99%

CuI as a Hole-Selective Contact for GaAs Solar Cells

Haggrén

Raj

Haggren

et al. 2022

ACS Appl. Mater. Interfaces

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Carrier-selective contacts have emerged as a promising architecture for solar cell fabrication. In this report, the first hole-selective III–V semiconductor solar cell is demonstrated using copper iodide (CuI) on i-GaAs. Surface passivation quality of GaAs is found to be essential for open-circuit voltage (V OC), with good correlation between photoluminescence properties of the GaAs layer and the V OC. Passivation with <10 nm thick In0.49Ga0.51P layers is shown to provide an over 300 mV improvement. Oxygen-rich CuI is formed by natural oxidation in the atmosphere, and the increased oxygen content of ∼10% is validated by energy-dispersive X-ray measurements. The oxygen incorporation is shown to improve hole selectivity and thus solar conversion efficiency. Ultraviolet photoelectron spectroscopy indicates a high work function of ∼6 eV for the oxygen-rich CuI. With optimized GaAs surface passivation and oxygen-rich CuI, a V OC of nearly 1 V and a solar conversion efficiency of 13.4% are achieved. The solar cell structure includes only undoped GaAs, a surface passivation layer, and non-epitaxial CuI contact and is therefore very promising to various low-cost crystal growth methods. The results have a significant impact on III–V solar cell fabrication and costs as it (i) enables fully carrier-selective architectures, (ii) reduces cell fabrication complexity, and (iii) is suitable for layers grown by low-cost crystal growth techniques.

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Growth and surface passivation of near-surface InGaAs quantum wells on GaAs (110)

Cited by 6 publications

References 23 publications

Direct GaAs Nanowire Growth and Monolithic Light‐Emitting Diode Fabrication on Flexible Plastic Substrates

Direct GaAs Nanowire Growth and Monolithic Light‐Emitting Diode Fabrication on Flexible Plastic Substrates

Strong surface passivation of GaAs nanowires with ultrathin InP and GaP capping layers

CuI as a Hole-Selective Contact for GaAs Solar Cells

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