CuI as a Hole-Selective Contact for GaAs Solar Cells

Haggrén, Tuomas; Raj, Vidur; Haggren, Anne; Gagrani, Nikita; Jagadish, Chennupati; Tan, H. H.

doi:10.1021/acsami.2c16033

Cited by 4 publications

(9 citation statements)

References 54 publications

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“…In recent years, this passivation method has still been applied. In the report of Haggren et al, [ 197 ] copper iodide (CuI) was used as a hole‐selective contact material for the GaAs solar cell with the structure displayed in Figure a and is a promising architecture for solar cell fabrication. Simultaneously, a <10 nm‐thick In 0.49 Ga 0.51 P layer was used for surface passivation and was proved to effectively reduce the nonradioactive recombination and prolong the carrier lifetime.…”

Section: Optimization Pathways For Efficiency Enhancementmentioning

confidence: 99%

Section: Optimization Pathways For Efficiency Enhancementmentioning

confidence: 99%

“…k) Photoemission spectra of C 1s core level collected from the native oxide-covered GaSb(100) surface and after treatment with aqueous ammonium sulfide solution (NH 4 ) 2 S (aq) and with solution of ammonium sulfide in 2-propanol [(NH 4 ) 2 S þ 2PA]. a-d) Reproduced with permission [197]. Copyright 2022, American Chemical Society.…”

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confidence: 99%

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Recent Advances in III–V Compounds/Polymer Hybrid Solar Cells

Chen

Guo

et al. 2023

Solar RRL

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The combination of III–V compound semiconductor materials and organic semiconductor materials to construct hybrid solar cells is a potential pathway to resolve the problems of conventional doped p–n junction solar cells, such as complexities in fabrication process and high costs. This review presents the recent progress of organic–inorganic hybrid solar cells based on polymers and III–V semiconductors, from materials to devices. The available growth process for planar/nanostructured III–V semiconductor materials, along with patterning and etching processes for nanostructured materials, are reviewed. As an emphasis of this review, advanced device structure designs are reviewed for facilitation of carrier collection and high efficiency, at planar structure level and nanowire structure level, respectively. Optimization pathways for efficiency enhancement are discussed with respect to polymer layers and surface/interface passivation, respectively. Finally, perspectives on the future development of such hybrid cells are presented.

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Section: Optimization Pathways For Efficiency Enhancementmentioning

confidence: 99%

Section: Optimization Pathways For Efficiency Enhancementmentioning

confidence: 99%

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Recent Advances in III–V Compounds/Polymer Hybrid Solar Cells

Chen

Guo

et al. 2023

Solar RRL

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“…48 In experiments, ESCs have been more widely studied with solar cell demonstrations including GaAs and InP, whereas HSC has been demonstrated only for GaAs. 44,45 Here, GaAs cells with CSCs are discussed due to their excellent efficiency 7 and the mature ELO processes for GaAs-based devices.…”

Section: Affinities (χ) and High Work Functions (φ) (And Vice Versa F...mentioning

confidence: 99%

Section: Carrier-selective Contacts For Ultrathin Solar Cellsmentioning

confidence: 99%

III–V Thin Films for Flexible, Cost-Effective, and Emerging Applications in Optoelectronics and Photonics

Haggren,

Tan,

Jagadish

2023

Acc. Mater. Res.

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Metrics & MoreArticle Recommendations * sı Supporting Information CONSPECTUS: Semiconductor thin films possess a unique set of characteristics, making them highly suitable for a number of optoelectronic and photonic applications. The III−V semiconductors, in particular, are lightweight, flexible, durable, and suitable for high-efficiency devices. For example, flexible and lightweight III−V thin-film solar cells have been demonstrated with a solar conversion efficiency of 37.8%. Besides photovoltaics, III−V semiconductor thin films are also suitable for LEDs, lasers, detectors, sensors, and frequencyconverting devices. These characteristics make the III−V thin films excellent candidates for applications in space, Internet of things, drones, autonomous vehicles, and wearable devices. Despite these advantages, the high cost of fabrication has hindered the uptake of III−V thin films. On the other hand, recent developments in multilayer epitaxial lift off (MELO) may drastically improve the cost-efficiency of device fabrication. These developments are discussed in the Account, and they alone may improve cost-efficiency by a factor of 4. Even further cost improvements may be achieved with the use of ultrathin solar cells. For ultrathin cells, a promising architecture is discussed, where an epitaxially grown III−V absorber layer is sandwiched between nonepitaxial carrierselective contact layers thus forming a double-heterojunction. This structure minimizes epitaxial thickness and promises low-cost and high-efficiency devices, with theoretical cost-efficiency improvement reaching as high as a factor of 10 when combined with MELO.Perhaps even more interestingly, recent developments in III−V thin films demonstrate a wholly novel device types. One interesting device architecture uses single-crystalline nanofilms with a thickness of only tens of nanometers, thereby reducing device cost significantly. These ultralow thicknesses have two consequences: the surface properties become dominant, and the optical properties, such as absorption, are decoupled from bulk material values. This Account discusses an example of UV-sensitive GaAs photodetectors, contrasting typical GaAs devices that are sensitive in infrared.Another important device class that has attracted significant attention recently is metamaterials. Metamaterial-based devices offer novel solutions to a whole range of applications in photonics and optics. They are planar structures with nanoscale resonators that are used to focus, bend, and modify light. III−V thin films are excellent candidates for metamaterial fabrication due to their high refractive indices, high nonlinear-optical coefficients, and direct band gaps that allow the fabrication of optoelectronic metamaterials. III−V metamaterials with a focus on frequency conversion are discussed. As a whole, this Account discusses various facets of III−V thin-film technology, from cost-efficient fabrication to novel and emerging device types. The improved cost-efficiency makes them attractive for a number of increasingl...

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21.2% GaAs Solar Cell Using Bilayer Electron Selective Contact

Raj,

Haggren,

Mayon

et al. 2024

Solar RRL

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GaAs remain one of the crucial materials for solar cell applications as it boasts the world’s highest efficiency single junction solar cells. However, their high cost limits their widespread terrestrial applications. Traditional GaAs solar cells required a complex stack of doped junctions, which could only be grown using epitaxy, which is a very costly technique. Here, we study a non‐epitaxial bilayer of ZnO and TiO2 as electron‐selective contact. We show that a bilayer selective contact could achieve very high performance through interface band engineering and a reduction of the barrier for electron transfer. We achieve 21.2% efficient solar cells, with Voc of 1.04 V, Jsc of 26.13 mA.cm‐2, and a FF of 77.8%. The Voc reported in the paper is comparable to the highest Voc reported for substrate‐based GaAs solar cells of 1.075 V. An experimental loss analysis shows that the device is mainly limited by series and shunt resistance and reflection losses, both of which could further be minimized by optimization of the fabrication process. The results presented will be very useful for the further development of cheaper GaAs solar cells, whereas the bilayer selective contact concept can be implemented for other kinds of solar cells.This article is protected by copyright. All rights reserved.

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CuI as a Hole-Selective Contact for GaAs Solar Cells

Cited by 4 publications

References 54 publications

Recent Advances in III–V Compounds/Polymer Hybrid Solar Cells

Recent Advances in III–V Compounds/Polymer Hybrid Solar Cells

III–V Thin Films for Flexible, Cost-Effective, and Emerging Applications in Optoelectronics and Photonics

21.2% GaAs Solar Cell Using Bilayer Electron Selective Contact

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