Determination of the nonequilibrium concentration of vacancies in silicon crystals by measuring the concentration of nickel atoms at lattice sites

Khorosheva, Мaria; Орлов, В. И.; Абросимов, Н. В.; Kveder, V. V.

doi:10.1134/s1063776110050067

Cited by 10 publications

(11 citation statements)

References 22 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The figure clearly demonstrates that the lifetime significantly decreases and becomes spatially non‐uniform, as evident by the disc/ring patterns. Such a defect distribution is characteristic for FZ ingots grown with a fast growth rate, whereby V / G is high in the crystal core and low around its periphery causing a transition from vacancy mode to interstitial mode . We therefore suggest that the central region (lower lifetime region) of the wafer shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon

Grant

Маркевич

Mullins

et al. 2016

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

By studying the minority carrier lifetime in recently manufactured commercially available n‐ and p‐type float‐zone (FZ) silicon from five leading suppliers, we observe a very large reduction in the bulk lifetime when FZ silicon is heat‐treated in the range 450–700 °C. Photoluminescence imaging of these samples at the wafer scale revealed concentric circular patterns, with higher recombination occurring in the centre, and far less around the periphery. Deep level transient spectroscopy measurements indicate the presence of recombination active defects, including a dominant center with an energy level at ∼Ev + 0.5 eV. Upon annealing FZ silicon at temperatures >1000 °C in oxygen, the lifetime is completely recovered, whereby the defects vanish and do not reappear upon subsequent annealing at 500 °C. We conclude that the heat‐treatments at >1000 °C result in total annihilation of the recombination active defects. Without such high temperature treatments, the minority carrier lifetime in FZ silicon is unstable and will affect the development of high efficiency (>24%) solar cells and surface passivation studies.

show abstract

Section: Resultsmentioning

confidence: 99%

Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon

Grant

Маркевич

Mullins

et al. 2016

Physica Rapid Research Ltrs

View full text Add to dashboard Cite

show abstract

“…To measure the concentration of vacancies and vacancy complexes ( V init ) in our samples before and after AlG we used the well‐known method, based on indiffusion of Pt or Au, and measurements of their concentration profiles. This method was proposed by Zimmermann and Ryssel 10, further developed in Jacob et al 11 and very recently was considered as standard methods to establish new ways for vacancy determination 12. Gold indiffusion was carried out for 2 h at 850 °C and platinum indiffusion was at 730 °C for 30 min.…”

Section: Methodsmentioning

confidence: 99%

Platinum and gold diffusion monitor vacancy profiles induced into silicon wafers by aluminum alloying

Abdelbarey¹,

Kveder²,

Schröter³

et al. 2013

Physica Status Solidi (a)

View full text Add to dashboard Cite

In this paper, we use the gold and platinum marker method, to confirm our preliminary finding that aluminum indiffusion into Si crystal during so‐called “aluminum gettering” (AlG) can result in the injection of vacancies into Si crystal. Depth profiles of Au in p‐type Si have been studied by the DLTS after diffusion at 850 °C for 2 h prior to and subsequent to AlG. The donor concentration attributed to Aus is about two orders of magnitude higher compared with that measured in samples without AlG. Similar results were also observed for Pt. The increase in Pts or Aus concentration in the silicon bulk provides the most direct evidence so far that AlG with 400 nm Al layer, for 50 min at 1100 °C injects vacancies with non‐equilibrium concentrations of about 1015 cm−3. The possible mechanism of vacancies generation is discussed.

show abstract

“…To detect electrically inactive complexes of point defects occurring in the course of dislocation motion, we used a gold diffusion (see Refs. ).…”

Section: Introductionmentioning

confidence: 97%

On the nature of defects produced by motion of dislocations in silicon

Khorosheva

Kveder

Seibt

2015

Phys. Status Solidi A

Self Cite

View full text Add to dashboard Cite

Point defects generated during motion of dislocations in silicon have been investigated using their reaction with gold atoms during gold in‐diffusion. Deep Level Transient Spectroscopy (DLTS) measurements in n‐ and p‐type samples have revealed that in regions with dislocation densities of 104–106 cm−2, the concentration of gold atoms is by 1.5–2 orders of magnitude higher than in the dislocation‐free regions of the same samples. The increase in the gold atom concentration in the regions containing dislocations is explained by the presence of some vacancy complexes generated by dislocations moving in their slip planes. Just after dislocation motion, most of these complexes are not detectable by DLTS. They become observable in DLTS due to their reaction with gold atoms.

show abstract

Determination of the nonequilibrium concentration of vacancies in silicon crystals by measuring the concentration of nickel atoms at lattice sites

Cited by 10 publications

References 22 publications

Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon

Thermal activation and deactivation of grown‐in defects limiting the lifetime of float‐zone silicon

Platinum and gold diffusion monitor vacancy profiles induced into silicon wafers by aluminum alloying

On the nature of defects produced by motion of dislocations in silicon

Contact Info

Product

Resources

About