The atomic process, kinetics, and equilibrium thermodynamics underlying the gettering of transition-metal impurities in Si are reviewed. Methods for mathematical modeling of gettering are discussed and illustrated. Needs for further research are considered.

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We demonstrate electroluminescence (EL) with an external efficiency of more than 0.1% at room temperature from glide dislocations in silicon. The key to this achievement is a considerable reduction of nonradiative carrier recombination at dislocations due to impurities and core defects by impurity gettering and hydrogen passivation, respectively, which is shown by means of deep-level transient spectroscopy. Time-resolved EL measurements reveal a response time below 1.8 μs, which is much faster, compared to the band-to-band luminescence of bulk silicon.

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Using deep level transient spectroscopy (DLTS) the defects introduced into silicon by plastic deformation are investigated with respect to their capture and emission characteristics. In agreement with what has been found by electron spin resonance (EPR), kind and density of the detected localized states strongly change with deformation temperature and during anneal around 0.6 Tm (Tm melting temperature). While part of this effect can be certainly explained by anneal out of point defects, there must be a structural change in the core region of the dislocation, since the dislocation density remains unchanged during anneal.

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Copper-silicide precipitates in silicon obtained after copper diffusion and quench in different liquids were studied by transmission electron microscopy and capacitance spectroscopy techniques. A correlation between the quenching rate, geometric size, and deep level spectra of the copper-silicide precipitates was established. The unusually wide deep level spectra are shown to be due to a defect-related band in the bandgap. The parameters of the band are evaluated using numerical simulations. A positive charge of copper-silicide precipitates in p-type and moderately doped n-type Si is predicted by simulations and confirmed by minority carrier transient spectroscopy measurements. Strong recombination activity of the precipitates due to attraction of minority carriers by the electric field around the precipitates and their recombination via the defect band is predicted and confirmed by the experiments. The pairing of copper with boron is shown to be an important factor determining the precipitation kinetics of the interstitial copper at room temperature.) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 132.239.1.231 Downloaded on 2014-11-18 to IP