On the Energy Spectrum of Dislocations in Silicon

Abstract

Using deep level transient spectroscopy (DLTS) the defects introduced into silicon by plastic deformation are investigated with respect to their capture and emission characteristics. In agreement with what has been found by electron spin resonance (EPR), kind and density of the detected localized states strongly change with deformation temperature and during anneal around 0.6 Tm (Tm melting temperature). While part of this effect can be certainly explained by anneal out of point defects, there must be a structural change in the core region of the dislocation, since the dislocation density remains unchanged during anneal.

Electrical properties of dislocations and point defects in plastically deformed silicon

“…4. but using OLTS the convention is to calculate NT from the equivalent expression where Co is the total capacitance from the junction. AC max the maximal OLTS signal and ~ is a correction factor introduced by the sampling procedure of (5) the exponential transient. For a more accurate determination of the concentrations the influence of the free carrier tail (sometimes referred to as the ~ volume) extending from the neutral region into the space charge region has to be included.…”

“…which has been applied to OLTS results in Ref. 5. the capture kinetics is described by a -10 -time dependent Coulomb-potential.…”

Gettering Processes and the Role of Extended Defects

“…Deep dislocation-related energy levels have been intensively investigated by DLTS (see, e.g., [170][171][172][173][174][175][176][177]). However, the exact origin of the defects responsible for even well known dislocation-related energy states detected by DLTS is not yet completely clear.…”

Temperature Dependent Electron Beam Induced Current Study of Defects in Silicon

“…Investigations by means of deep level transient spectroscopy (DLTS) [4][5][6] and ESR [7,8] have revealed that several deep levels are induced in Si by plastic deformation. However, since such deep levels are eliminated by annealing at temperatures higher than 800°C, it is now accepted that they are mostly attributed to point defects or their clusters which are introduced during deformation and that the regular parts of dislocations are electrically inactivesince geometrical dangling bonds along the dislocation core are reconstucted.…”