Bandlike and localized states at extended defects in silicon

Schröter, W.; Kronewitz, J.; Gnauert, U.; Riedel, Frank; Seibt, M.

doi:10.1103/physrevb.52.13726

Cited by 180 publications

(184 citation statements)

References 14 publications

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“…1, this is shown for t p =5 ms and RW=2 s −1 . If t p is kept constant and RW increased, we have found that E 370 increased but that E 300 remained openUP (December 2007) about the same size. This means that the (E 300 +E 370 ) peak appeared to be a single, slightly asymmetric peak consisting primarily of E 370 .…”

Section: Resultsmentioning

confidence: 91%

“…This, in turn, meant that we could not compute the capture barrier for carrier capture onto E3′. This slow filling of E 370 may mean that it is not a welldefined point defect but that it may have a somewhat extended nature onto which multiple charges can be captured, thus leading to a Coulomb barrier, somewhat like carrier capture onto a dislocation [13].…”

Section: Resultsmentioning

confidence: 99%

“…Some samples were annealed ex situ for 2 h at 750 °C, either in oxygen, nitrogen (700 mbar) or in vacuum prior to metal deposition. Circular openUP (December 2007) Schottky contacts, having areas ranging from 4×10 −4 to 5×10 −3 cm 2 , were realized by thermal evaporation of Pd on the top, nominally undoped, ZnO layer. On part of the sample, the top, undoped layer was removed and the n ++ ZnO:Al layer was contacted by sputtering Au onto it to serve as an ohmic back contact [6].…”

Section: Methodsmentioning

confidence: 99%

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Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370meV below the conduction band

Auret

Meyer

Rensburg

et al. 2007

Physica B: Condensed Matter

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We have used deep level transient spectroscopy (DLTS) to characterize defects in ZnO grown by pulsed-laser deposition (PLD). Using high resolution Laplace DLTS, we found that at the high temperature side of the commonly observed defect E3 (about 300 meV below the conduction band) another close lying peak (E3′ with thermal activation energy of 370 meV) is also observed. The concentration ratio of E3 and E3′ depends on the annealing history of the samples. It is most prevalent in as-grown samples and samples that had been annealed in an oxygen atmosphere. This suggests that E3′ may be related to the incorporation of oxygen in the lattice. Electron capture onto that E3′ defect strongly increases with increasing temperature.

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Section: Resultsmentioning

confidence: 91%

Section: Resultsmentioning

confidence: 99%

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370meV below the conduction band

Auret

Meyer

Rensburg

et al. 2007

Physica B: Condensed Matter

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“…If the lifetime is governed by extended defects showing a high local density of states, these defects capture majority carriers and charge up, leading to a potential barrier with a depletion region around. It is well−known from deep level transient spectros− copy (DLTS) investigations that this type of extended de− fects does not show exponential carrier capture properties, as SRH−type point defect levels do, but rather a logarithmic "barrier−controlled" majority carrier capture and also non− −exponential thermal emission [42]. Since, under steady− −state injection condition, the majority carrier capture rate exponentially depends on the barrier height, this barrier height and the captured charge at the defect reduce loga− rithmically with increasing minority carrier concentration.…”

Section: The Diffusion (First Diode) Currentmentioning

confidence: 99%

Understanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions

Breitenstein

2013

Opto-Electronics Review

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Solar cells made from multi- or mono-crystalline silicon wafers are the base of today’s photovoltaics industry. These devices are essentially large-area semiconductor p-n junctions. Technically, solar cells have a relatively simple structure, and the theory of p-n junctions was established already decades ago. The generally accepted model for describing them is the so-called two-diode model. However, the current-voltage characteristics of industrial solar cells, particularly of that made from multi-crystalline silicon material, show significant deviations from established diode theory. These deviations regard the forward and the reverse dark characteristics as well as the relation between the illuminated characteristics to the dark ones. In the recent years it has been found that the characteristics of industrial solar cells can only be understood by taking into account local inhomogeneities of the dark current flow. Such inhomogeneities can be investigated by applying lock-in thermography techniques. Based on these and other investigations, meanwhile the basic properties of industrial silicon solar cells are well understood. This contribution reviews the most important experimental results leading to the present state of physical understanding of the dark and illuminated characteristics of multi-crystalline industrial solar cells. This analysis should be helpful for the continuing process of optimizing such cells for further increasing their energy conversion efficiency.

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“…The above results strongly suggest that the energy distributions of the defect levels are not well defined at a single energy but are instead band-like. Band-like defect states typically appear in material with extended defects such as threading dislocations [13]. Figure 3 shows a typical cross sectional TEM ofp-InGaAsN.…”

Section: B Experimentalmentioning

confidence: 99%

InGaAsN: A Novel Material for High-Efficiency Solar Cells and Advanced Photonic Devices

Allerman¹,

Follstaedt²,

Gee³

et al. 1999

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Bandlike and localized states at extended defects in silicon

Cited by 180 publications

References 14 publications

Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370meV below the conduction band

Electronic properties of defects in pulsed-laser deposition grown ZnO with levels at 300 and 370meV below the conduction band

Understanding the current-voltage characteristics of industrial crystalline silicon solar cells by considering inhomogeneous current distributions

InGaAsN: A Novel Material for High-Efficiency Solar Cells and Advanced Photonic Devices

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