On the nature of defects produced by motion of dislocations in silicon

Abstract

Point defects generated during motion of dislocations in silicon have been investigated using their reaction with gold atoms during gold in‐diffusion. Deep Level Transient Spectroscopy (DLTS) measurements in n‐ and p‐type samples have revealed that in regions with dislocation densities of 104–106 cm−2, the concentration of gold atoms is by 1.5–2 orders of magnitude higher than in the dislocation‐free regions of the same samples. The increase in the gold atom concentration in the regions containing dislocations is explained by the presence of some vacancy complexes generated by dislocations moving in their slip planes. Just after dislocation motion, most of these complexes are not detectable by DLTS. They become observable in DLTS due to their reaction with gold atoms.

Deep carrier traps in as grown isotopically pure 28Si FZ crystal

“…The problem with this identification is that most small vacancy complexes anneal out below T < 450 °C and moreover, these small complexes cannot be attributed to extended defects. As for the large vacancy complexes, it is widely accepted , that their electrical activity can be related only to the decoration with metal atoms, not found in this crystal.…”

Interaction of Chromium Atoms with Dislocations and as‐Grown Vacancy Complexes and its Impact on the Electronic Properties of FZ‐Si

“…Note that the dislocations in our samples were introduced in such a way that a large number of vacancy defects are generated by moving dislocations in their slip planes, so-called "trail"defects. [25] We could expect that, in addition to interacting with as-grown vacancy N-V defects, the chromium atoms can also react with vacancy defects generated by moving dislocations. However, as can be seen from Figure 2b-d, we do not observe an increase in the recombination rate in the regions where the dislocations moved.…”

“…After deformation, but before chromium in‐diffusion, all samples were subjected to aluminum gettering (AlG) at a temperature of 830 °C for 2 h. followed by slow cooling down to 400 °C for 2 h. The samples preparation procedure is detailed in ref. .…”

X-ray topo-tomography studies of linear dislocations in silicon single crystals

“…It is known [see e.g. Khorosheva et al (2015)] that hexagonal PDHLs occur in an Si(111) crystal as a result of the application of four-point bending, and their Burger's vectors can be directed along [101] and [011]. Initially, the PDHLs come to the surface either by two 60 segments, or by 60 and screw segments (Hä nschke et al, 2017) (see Fig.…”