At high resistivity gold compensated n+−i−n+‐silicon samples the values of c p− and c p−/cn were determined. These values were obtained from a current controlled negative resistance (CCNR) occuring at the steady state I–U characteristic without using the unknown magnitude of the spin degeneracy factor g and the values of p1 and n1. The CCNR is caused by double injection filaments arising in space charge limited current (sclc) diodes. The origin of these filaments is given. The formation of these current filaments takes a certain delay time TD, which allows by means of pulse measurements to separate the single and double injection behavior. The corresponding conditions are given. The comparison of the values of cn (determined from the single injection behaviour), c p−, and c p−/cn with those in the literature shows that the main difference results from different values of the activation energies and of g. The value of cn = 9.8 × 10−9 cm3 s−1 and c p−/cn = 2.6 agrees well with that given by Bemski, Zimmermann, and Braun and Grimmeiss, whereas the values given by Sah et al, and by Fairfield and Gokhale could not be confirmed.