Determination of the capture ratecn of the gold acceptor level from single injection n+–i–n+ silicon SCLC diodes

Self Cite

At high resistivity gold compensated n+−i−n+‐silicon samples the values of c p− and c p−/cn were determined. These values were obtained from a current controlled negative resistance (CCNR) occuring at the steady state I–U characteristic without using the unknown magnitude of the spin degeneracy factor g and the values of p1 and n1. The CCNR is caused by double injection filaments arising in space charge limited current (sclc) diodes. The origin of these filaments is given. The formation of these current filaments takes a certain delay time TD, which allows by means of pulse measurements to separate the single and double injection behavior. The corresponding conditions are given. The comparison of the values of cn (determined from the single injection behaviour), c p−, and c p−/cn with those in the literature shows that the main difference results from different values of the activation energies and of g. The value of cn = 9.8 × 10−9 cm3 s−1 and c p−/cn = 2.6 agrees well with that given by Bemski, Zimmermann, and Braun and Grimmeiss, whereas the values given by Sah et al, and by Fairfield and Gokhale could not be confirmed.

Properties of the gold acceptor state in silicon

Kassing¹,

Lenz²

1974

Self Cite

Determination of the temperature independence of the capture cross-section of the gold acceptor level for electrons in n-type silicon

Kassing¹,

Kähler²,

Dudeck³

1975

New results of the transient behaviour of single injection sclc diodes with one deep level

Dudeck¹,

Kassing²

1975

Self Cite

It is shown, that only taking into account the time dependence of the local electrical field ℰ(t) yields a complete understanding of the transient behaviour of sclc‐diodes with deep levels. Due to this time dependence of ℰ(t) a rearrangement of the space charge distribution at t = 0 to t → ∞ takes place effecting that at t → ∞ nearly the whole space charge is located within 1/10 of the sample length and that the electric field is equal to U/L in nearly 90% of the sample. The time for the current reaching its steady state value after applying a voltage step is therefore mainly determined by the emission time constant and not by the capture time constant as usually supposed.