1975
DOI: 10.1002/pssa.2210300207
|View full text |Cite
|
Sign up to set email alerts
|

New results of the transient behaviour of single injection sclc diodes with one deep level

Abstract: It is shown, that only taking into account the time dependence of the local electrical field ℰ(t) yields a complete understanding of the transient behaviour of sclc‐diodes with deep levels. Due to this time dependence of ℰ(t) a rearrangement of the space charge distribution at t = 0 to t → ∞ takes place effecting that at t → ∞ nearly the whole space charge is located within 1/10 of the sample length and that the electric field is equal to U/L in nearly 90% of the sample. The time for the current reaching its s… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...

Citation Types

0
0
0

Year Published

1985
1985
1985
1985

Publication Types

Select...
1

Relationship

0
1

Authors

Journals

citations
Cited by 1 publication
references
References 6 publications
0
0
0
Order By: Relevance