Electrically detected magnetic resonance of a transition metal related recombination center in Si p-n diodesCalculations have been made of dc I -V characteristics of long p + -in + diodes with deep levels showing a negative differential resistance region. The influence of the recombination center data, especially of the capture coefficients of both electrons and holes, en and e;, is discussed. The calculations show that en only influences the high injection regime and the minimum voltage, whereas e; only influences the prebreakdown region and the breakdown voltage; thus a new method arises to determine en and e; in the same sample. These results are confirmed in silicon p + -in + diodes with the gold acceptor acting as recombination center. Theory and experimental results are in complete agreement for c n = 3.2X 10-8 cm 3 s-1 and C; = I X 10-7 cm 3 s-l • Finally, these values are compared with those given in the literature. PACS numbers: 85.30.De, n.20.lv, n.20.Ht :::: U(V)---.... ·-FIG. 2. Typical measured filamentary I-V characteristic of a Au-compensated silicon p+ _i_no diode.

The temperature dependence of the capture cross section of negatively charged gold centers in n‐type silicon for holes σ p− is determined in the temperature range of 55 K ≦ T ≦ 340 K from the temperature dependent breakdown voltage UBD of gold compensated pin diodes showing a negative differential resistance region. The temperature dependence of the capture cross section of neutral gold centers in the range of 193 K ≦ T ≦ 320 K, which was obtained in an earlier paper, is confirmed by means of small signal pulse measurements in the high injection regime of the same double injection diodes. The over‐temperature caused by Joule heating in current filaments occurring in the high injection region of the stationary S‐shaped I–U characteristic is measured for the first time using a large signal pulse method.

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It is shown, that only taking into account the time dependence of the local electrical field ℰ(t) yields a complete understanding of the transient behaviour of sclc‐diodes with deep levels. Due to this time dependence of ℰ(t) a rearrangement of the space charge distribution at t = 0 to t → ∞ takes place effecting that at t → ∞ nearly the whole space charge is located within 1/10 of the sample length and that the electric field is equal to U/L in nearly 90% of the sample. The time for the current reaching its steady state value after applying a voltage step is therefore mainly determined by the emission time constant and not by the capture time constant as usually supposed.

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