Determination of the temperature dependence of the capture cross-sections of the gold acceptor level and of the temperature of current filaments in silicon pin diodes

Abstract

The temperature dependence of the capture cross section of negatively charged gold centers in n‐type silicon for holes σ p− is determined in the temperature range of 55 K ≦ T ≦ 340 K from the temperature dependent breakdown voltage UBD of gold compensated pin diodes showing a negative differential resistance region. The temperature dependence of the capture cross section of neutral gold centers in the range of 193 K ≦ T ≦ 320 K, which was obtained in an earlier paper, is confirmed by means of small signal pulse measurements in the high injection regime of the same double injection diodes. The over‐temperature caused by Joule heating in current filaments occurring in the high injection region of the stationary S‐shaped I–U characteristic is measured for the first time using a large signal pulse method.

A Simple Method to Differentiate between Free-Carrier Recombination and Trapping Centers in the Bandgap of the p-Type Semiconductor

“…Values for the free-carrier capture cross sections ranged from 10 − 21 cm 2 to 10 − 13 cm 2 which have been reported by several researchers in silicon-based devices and different materials [6][7][8][9][10][11][12][13][14][16][17][18][19]. Dudeck and Kassing [10] determined the temperature dependence of the capture cross section of negatively charged gold centers in n-type silicon for holes in the temperature range of 55 to 340 K from the temperature-dependent breakdown voltage of gold-compensated PIN diodes showing a negative differential resistance region. Based on a simplified analysis of the kinetics of filling of the traps in the slow regime of filling, Stievenard et al [13] presented a new technique of measuring capture cross sections in semiconductors.…”

“…Different measurement methods also give widely differing values of the free-carrier capture cross sections for the same material or device structure [5,15]. Values for the free-carrier capture cross sections ranged from 10 − 21 cm 2 to 10 − 13 cm 2 which have been reported by several researchers in silicon-based devices and different materials [6][7][8][9][10][11][12][13][14][16][17][18][19]. Dudeck and Kassing [10] determined the temperature dependence of the capture cross section of negatively charged gold centers in n-type silicon for holes in the temperature range of 55 to 340 K from the temperature-dependent breakdown voltage of gold-compensated PIN diodes showing a negative differential resistance region.…”

“…If the localized state captures free carriers temporarily and then reemits them back to their original band, the localized state is called a free-carrier trap [1][2][3][4][5]. ese properties depend on the shallowness and the deepness of the localized state in the bandgap of the material [6][7][8][9][10][11][12][13][14]. Different localized states have different capture coefficients for free carriers.…”