Post-breakdown bulk oscillations in gold-doped silicon p+−i−n+ double-injection diodes

Mantha, Bhaskar; Henderson, H. Thurman

doi:10.1016/0038-1101(80)90014-3

Cited by 4 publications

(3 citation statements)

References 18 publications

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“…The dashed line shows the continuation of the zero-flow characteristic into the high-current (high-temperature) region which, in practice, was avoided for preservation of the sensors (to prevent sensor burn-out). The NDR regime, which results from an emerging negative coefficient of resistance, is not indicative of electronic switching phenomena which this laboratory has earlier reported [18,19]. Rather, it is explained by the combination of the temperature dependence of the mobility and the carrier concentration.…”

Section: Flow Testingmentioning

confidence: 70%

Structural design and characteristics of a thermally isolated, sensitivity-enhanced, bulk-micromachined, silicon flow sensor

Betzner

Doty²,

Hamad³

et al. 1996

J. Micromech. Microeng.

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A thermal flow sensor which has been bulk micromachined from a high-resistivity (, n-type) silicon wafer is herein reported. A structurally and functionally complex sensing element has been fabricated, using standard etching and deposition techniques, which demonstrates a very high degree of thermal isolation, as well as uniquely enhanced sensitivity characteristics. This device is explored primarily from a structural point of view to illustrate the formation of silicon nitride bridges, in the form of `chevrons', which provide its thermal isolation. Results of extensive testing of the electrical and mechanical characteristics are presented which demonstrate the thermal sensitivity effects. The current - voltage characteristic curve is shown to be S shaped (i.e. with a negative differential resistance regime), and results in both positive- and negative-temperature-coefficient modes of operation, as well as high sensitivity. The voltage - flow velocity curve is found to be similar to that of other `hot-wire' type devices and yields a flow sensitivity of about in air, depending on range and bias. The transient response of these sensors was obtained by using single pulses of current, to validate the effectiveness of the thermal isolation structure. The time response depends on the varied size (mass) of the device, but response times into the millisecond range have been obtained. Vibration tests on the silicon nitride thermal isolation bridges showed 95% mechanical yield after processing and virtually no degradation after vibration up to 50 g at 100 Hz.

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Section: Flow Testingmentioning

confidence: 70%

Structural design and characteristics of a thermally isolated, sensitivity-enhanced, bulk-micromachined, silicon flow sensor

Betzner

Doty²,

Hamad³

et al. 1996

J. Micromech. Microeng.

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show abstract

“…Finally, it has been shown above that systems showing resonance oscillatory capacitive effects can have associated with them, current oscillations in the time domain. If these two phenomena are linked, it would be expected that systems which show oscillations in the time domain, such as semi-insulating gallium arsenide (Grubin er a1 1980, Kaminska etal 1982, Johnson and Maracas 1985 or doped/compensated silicon (Moore etal 1966, Mantha andMaracas 1980), or even, systems exhibiting oscillatory photoconductive effects (Moore et a1 1967, Maksym andHearns 1979) could give rise to negative capacitance effects if measured in the frequency domain.…”

Section: Discussionmentioning

confidence: 99%

Anomalous low-frequency resonance-type behaviour and negative capacitance in doped glasses

Doyle¹

1986

J. Phys. D: Appl. Phys.

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It has been found that the dielectric capacitance response of doped silica glasses measured in the frequency range 10-3-105 Hz for temperatures between 500 and 1100K displays anomalous thermally activated resonance-type behaviour. This response is linked to time domain oscillations reported in similar materials. It is shown that negative capacitance can result from these time domain oscillations under certain conditions. One material in which negative capacitance has been seen, a doped boric oxide glass, is also discussed.

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“…Figure 3 shows a cross section of a simple, planar (DI) 2 device (ref. 8). The bulk material is gold-doped silicon, compensated by a shallow donor such as phosphorus.…”

Section: (0i) 2 In Siliconmentioning

confidence: 99%

A new very high voltage semiconductor switch

Sundberg

1985

1985 IEEE Power Electronics Specialists Conference

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Post-breakdown bulk oscillations in gold-doped silicon p+−i−n+ double-injection diodes

Cited by 4 publications

References 18 publications

Structural design and characteristics of a thermally isolated, sensitivity-enhanced, bulk-micromachined, silicon flow sensor

Structural design and characteristics of a thermally isolated, sensitivity-enhanced, bulk-micromachined, silicon flow sensor

Anomalous low-frequency resonance-type behaviour and negative capacitance in doped glasses

A new very high voltage semiconductor switch

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