Theory of transient currents in dielectrics at a limited level of single injection. I. The case of strong injection

Abstract

The theory of transient currents in dielectric layers at a limited level of single injection is suggested. As a result of the analysis six mechanisms of the transient process are revealed, that lead to a stationary space‐charge‐limited current. The conditions of existence and characteristic features of each of the mechanisms are ascertained. For all stages of the transient process a complete analysis of these mechanisms typical for the strong injection case, is performed. Analytical expressions for the time behaviour of the total current, total charge, space‐charge centroid, and electric field strength on the injecting interface, are obtained they correspond to the results of exact (numerical) solution of the general problem.

The effect of contact junctions on thermally stimulated depolarization current in thin semiconductor films

“…With reference to the problem of the transient current of monopolar injection, a similar system was used by Many and Rakavi [3] as well as Helfrich and Mark [4], assuming the field strength within the cathode region does not depend on time being zero; thus, the charge-carrier concentration within this junction is unrestricted. The theory of non-steady-state currents in dielectric and semiconductor layers taking into account the conditions at the interface is described in [5,6]; the possibility of using similar non-steady-state equations for the analysis of TSD currents solved by the method of numerical analysis is considered in [7,8].…”

Influence of Carrier Diffusion on Transient One-Carrier Injection Current in an Insulator with Traps

“…(1) V = 0.24, (2), ( 6 ) V = 1, (3 curve (3A) is the evaluated current decay the near-electrode region prior to injection into the dielectric. Beginning from tmin the charge carrier transit in the positive field prevails (section 11).…”

“…le. Therefore, despite the fact that the contact is "opened" for the injection of carriers in the beginning of transient, one can expect that the presence of a Mott-Gurney cloud of charge could considerably decrease the transient current value in comparison with the case when diffusion can be neglected, the so-called "drift approximation", see [6,25,261 (compare the diagrams Fig. l b , d, and f).…”

“…The problem will be solved numerically but approximate analytical solutions for the transient current behavior with time will be obtained also. These solutions will be compared with those given by the drift approximation in [6,251, and after that the criteria for the drift approximation will be found.…”

“…In the present paper the behavior of TCSCI with account of diffusion is analyzed for the case of slow trapping, when the time of light of the injected carriers in the interelectrode space to = d2/pV is less than the time constant of trapping, rt = l/uoNt, and of weak injection, i.e. nc < Nt [6] (here p is the carrier mobility, Nt the density of traps, d the thickness of dielectric).…”