Theory of transient currents in dielectrics at a limited level of single injection. II. The case of weak injection

Baginskii, I. L.; Kostsov, E. G.

doi:10.1002/pssa.2210880230

Cited by 8 publications

(1 citation statement)

References 10 publications

(4 reference statements)

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“…With reference to the problem of the transient current of monopolar injection, a similar system was used by Many and Rakavi [3] as well as Helfrich and Mark [4], assuming the field strength within the cathode region does not depend on time being zero; thus, the charge-carrier concentration within this junction is unrestricted. The theory of non-steady-state currents in dielectric and semiconductor layers taking into account the conditions at the interface is described in [5,6]; the possibility of using similar non-steady-state equations for the analysis of TSD currents solved by the method of numerical analysis is considered in [7,8].…”

Section: Theoretical Modelmentioning

confidence: 99%

The effect of contact junctions on thermally stimulated depolarization current in thin semiconductor films

Kostsova¹,

Kostsov²

2008

J. Phys. D: Appl. Phys.

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The effect of interfacial conditions on the behaviour of thermally stimulated depolarization (TSD) currents in thin-film metal–semiconductor–metal structures has been investigated. It is revealed that at blocking junctions additional TSD peaks can appear. The appearance of TSD peaks is related to the injection of free charge carriers into the semiconductor from an electrode through the energy barrier. It is shown that such an injection can cause a change in the current sign at the TSD peak. This current inversion is determined by the relation between the energy barriers at both electrodes and by the positions of donor levels in the semiconductor.

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Section: Theoretical Modelmentioning

confidence: 99%

The effect of contact junctions on thermally stimulated depolarization current in thin semiconductor films

Kostsova¹,

Kostsov²

2008

J. Phys. D: Appl. Phys.

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Experimental determination of the mechanism of transient single-injection current flow in dielectrics

Bagistskii

Kostsov

1986

phys. stat. sol. (a)

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As previously shown the transient single‐injection current flow in dielectrics in the presence of trapping is determined by one of six qualitatively different mechanisms. In the present paper an algorithm of mechanism determination based on the analysis of the total current and electric field strength on the injecting interface variations in time is proposed. A mechanism of transient single‐injection current in the MNOS structure is determined and electrophysical parameters governing the process are estimated. It is confirmed experimentally that an exponential law of carrier emission from the injecting interface into the dielectric conduction band results in a current decay according to a 1/t law and in a field decrease on the injecting interface according to a logarithmic law.

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Influence of Carrier Diffusion on Transient One-Carrier Injection Current in an Insulator with Traps

Baginskii

Kostsov

1996

Phys. Stat. Sol. (a)

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The main influence on the transient process is shown to be exerted by the initial trapped space charge entering the dielectric before the onset of injection by carrier diffusion. This charge leads to a sharp decrease of the transient current and to a superlinear dependence of its value on the applied voltage in comparison with the case without diffusion. Approximate analytical solutions for the initial charge distribution and the transient current behavior are derived. They correspond to the results of an exact (numerical) solution of the general problem. Criteria for the validity of the diffusionless approximation are found.

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Theory of transient currents in dielectrics at a limited level of single injection. II. The case of weak injection

Cited by 8 publications

References 10 publications

The effect of contact junctions on thermally stimulated depolarization current in thin semiconductor films

The effect of contact junctions on thermally stimulated depolarization current in thin semiconductor films

Experimental determination of the mechanism of transient single-injection current flow in dielectrics

Influence of Carrier Diffusion on Transient One-Carrier Injection Current in an Insulator with Traps

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