Properties of the gold acceptor state in silicon

Abstract

At high resistivity gold compensated n+−i−n+‐silicon samples the values of c p− and c p−/cn were determined. These values were obtained from a current controlled negative resistance (CCNR) occuring at the steady state I–U characteristic without using the unknown magnitude of the spin degeneracy factor g and the values of p1 and n1. The CCNR is caused by double injection filaments arising in space charge limited current (sclc) diodes. The origin of these filaments is given. The formation of these current filaments takes a certain delay time TD, which allows by means of pulse measurements to separate the single and double injection behavior. The corresponding conditions are given. The comparison of the values of cn (determined from the single injection behaviour), c p−, and c p−/cn with those in the literature shows that the main difference results from different values of the activation energies and of g. The value of cn = 9.8 × 10−9 cm3 s−1 and c p−/cn = 2.6 agrees well with that given by Bemski, Zimmermann, and Braun and Grimmeiss, whereas the values given by Sah et al, and by Fairfield and Gokhale could not be confirmed.

New results of the transient behaviour of single injection sclc diodes with one deep level

“…I n this case one obtains according to the Ferrni-Dirac statistics for nT(x) the concentration of electrons in the deep level ( N , total trap concentration, n, = gN, exp (-( E , -E,)/kT), g spin degeneracy factor, N , effective density of states, E, -E , energy of the deep level). TO The assumption 6n(z) < 6n,(x) means that nearly all injected carriers are captured by the deep level, this is always realized in high resistivity, compensated samples, as was experimentally shown in [4]. With (4) leads to the following differential equation:…”

“…This is because the time dependence of the electric field has also to be taken into account in the time dependence of the current j ( t ) N n ( t ) Z'(t). The consideration of the time dependence of the electric field averaged over the whole sample led t o large deviations from the exponential time dependence of the current for t > rcn [3].…”