Determination of the temperature independence of the capture cross-section of the gold acceptor level for electrons in n-type silicon

The temperature dependence of the capture cross section of negatively charged gold centers in n‐type silicon for holes σ p− is determined in the temperature range of 55 K ≦ T ≦ 340 K from the temperature dependent breakdown voltage UBD of gold compensated pin diodes showing a negative differential resistance region. The temperature dependence of the capture cross section of neutral gold centers in the range of 193 K ≦ T ≦ 320 K, which was obtained in an earlier paper, is confirmed by means of small signal pulse measurements in the high injection regime of the same double injection diodes. The over‐temperature caused by Joule heating in current filaments occurring in the high injection region of the stationary S‐shaped I–U characteristic is measured for the first time using a large signal pulse method.

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Properties of the gold related acceptor level in silicon

Kalyanaraman

Kumar

1982

phys. stat. sol. (a)

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The apparent thermal activation energy of 0.56 eV and the electron thermal capture cross section of 2.0 × 10−16 cm2 are measured for the gold related acceptor level in p+ nn+ silicon diodes by isothermal current transient and DLTS techniques. Using the emission and capture rate data and a degeneracy ratio of 2, the energy separation of the trap level from the conduction band is calculated and found to have the same temperature dependence as the band gap indicating that the acceptor level is pinned with respect to the valence band a t Ev + 0.637 eV.

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Determination of the temperature independence of the capture cross-section of the gold acceptor level for electrons in n-type silicon

Cited by 13 publications

References 10 publications

Thermal capture cross-section of free electrons at neutral gold centres in n-type silicon

Thermal capture cross-section of free electrons at neutral gold centres in n-type silicon

Determination of the temperature dependence of the capture cross-sections of the gold acceptor level and of the temperature of current filaments in silicon pin diodes

Properties of the gold related acceptor level in silicon

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