Determination of beryllium and self-interstitial diffusion parameters in InGaAs

Marcon, J.; Ihaddadene, M.; Ketata, K.

doi:10.1016/s0022-0248(03)01096-0

Cited by 6 publications

(14 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The calculations of such an effect for the pairdiffusion mechanism in silicon were performed in [21] ("impurity atom-vacancy" pairs) and in [22,23] ("impurity atom-self-interstitial" pairs). Similar calculations for the kick-out mechanism during diffusion of different impurities in compound semiconductors were performed in [10,14,19,20,24]. All these calculations showed similar results, i.e.…”

Section: Wwwpss-bcomsupporting

confidence: 52%

“…As follows from [11,12], a better agreement with the experimental data was achieved for the neutral i Be ¥ and singly positively charged interstitial III I + in comparison with the case of singly positively charged i Be + and doubly positively charged interstitial 2 III I + . However, the determination of the interstitial Be charge state in InGaAs is still an open question (see, for instance, the recent paper Marcon et al [14]). …”

Section: Imentioning

confidence: 99%

“…It was commonly agreed that a local thermodynamic equilibrium held between a substitutionally dissolved beryllium, self-interstitials III I q+ and interstitial beryllium atoms i Be r + [1,[7][8][9][11][12][13][14]. Yoshida et al [15] carried out a qualitative consideration of the kick-out mechanism and found that there was no essential difference between the macroscopic description of impurity diffusion by means of the kick-out mechanism and the mechanism of formation, migration, and dissociation of the pairs "impurity atomself-interstitial".…”

Section: Imentioning

confidence: 99%

“…On the other hand, an excessive diffusion of Be from the base to the InP emitter during post-growth technological processes can cause a significant degradation of these transistors [1]. Therefore, many efforts were made to investigate experimentally Be diffusion in compound semiconductors [2][3][4][5][6][7][8][9][10][11][12][13][14]. Many efforts also were made to simulate Be diffusion [1,[6][7][8][9][10][11][12][13][14].…”

Section: Introductionmentioning

confidence: 99%

“…The aim of that implantation was to introduce a defect region in the InGaAs layer. The samples were then implanted with beryllium at an energy of 50 keV with a dose of 14 …”

mentioning

confidence: 99%

See 4 more Smart Citations

Simulation of p‐type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs

Saad

Fedotov

Velichko

et al. 2006

Physica Status Solidi (b)

View full text Add to dashboard Cite

A system of equations describing transient enhanced diffusion of beryllium in InGaAs due to kick‐out mechanism or due to formation, migration, and dissociation of the pairs “beryllium atom–group III self‐interstitial” is proposed and analyzed. Simulation of coupled diffusion of beryllium atoms and self‐interstitials in InGaAs during rapid thermal annealing was done for the case of dual implantation. For the experiment under consideration the first ion implantation of phosphorus atoms produced the region of extended defects that led to “uphill” diffusion of implanted Be in the defect region and in the vicinity of the surface. The suggested reason of “uphill” diffusion could be related to the nonuniform distribution of group III self‐interstitials that was formed due to the absorption of point defects on the extended defects and on the surface of a semiconductor. The calculated dopant profile agreed well with the experimental one and a comparison with the experimental data resulted in obtaining the values of beryllium diffusivity and other parameters describing Be diffusion in InGaAs. Further improvements of the model are also discussed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

show abstract

Section: Wwwpss-bcomsupporting

confidence: 52%

Section: Imentioning

confidence: 99%

Section: Imentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

“…The aim of that implantation was to introduce a defect region in the InGaAs layer. The samples were then implanted with beryllium at an energy of 50 keV with a dose of 14 …”

mentioning

confidence: 99%

See 3 more Smart Citations

Simulation of p‐type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs

Saad

Fedotov

Velichko

et al. 2006

Physica Status Solidi (b)

View full text Add to dashboard Cite

show abstract

Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study

Liu

Manzhos

et al. 2017

Acta Materialia

View full text Add to dashboard Cite

A roadblock in utilizing InGaAs for scaled-down electronic devices is its anomalous dopant diffusion behavior; specifically, existing models are not able to explain available experimental data on beryllium diffusion consistently. In this paper, we propose a comprehensive model, taking selfinterstitial migration and Be interaction with Ga and In into account. Density functional theory (DFT) calculations are first used to calculate the energy parameters and charge states of possible diffusion mechanisms. Based on the DFT results, continuum modeling and kinetic Monte Carlo simulations are then performed. The model is able to reproduce experimental Be concentration profiles. Our results suggest that the Frank-Turnbull mechanism is not likely, instead, kick-out reactions are the dominant mechanism. Due to a large reaction energy difference, the Ga interstitial and the In interstitial play different roles in the kick-out reactions, contrary to what is usually assumed. The DFT calculations also suggest that the influence of As on Be diffusion may not be negligible.arXiv:1608.00779v2 [cond-mat.mtrl-sci]

show abstract

Doping of high concentration of Beryllium in GaAs layers, by molecular-beam epitaxy

Noh

Cho

Jung

et al. 2010

Journal of Alloys and Compounds

View full text Add to dashboard Cite

Determination of beryllium and self-interstitial diffusion parameters in InGaAs

Cited by 6 publications

References 25 publications

Simulation of p‐type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs

Simulation of p‐type diffusion in compound semiconductor: the case of beryllium implanted in InGaAs

Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study

Doping of high concentration of Beryllium in GaAs layers, by molecular-beam epitaxy

Contact Info

Product

Resources

About