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, Phone: þ375 29 577 28 00, Fax: þ375 17 209 54 45Grain structure and the temperature dependences of resistivity, magnetoresistance, Hall and Seebeck coefficients measured in the range from 4 to 300 K were investigated for polycrystalline bismuth films obtained by the melt spinning (MS) and electrochemical deposition (ECD) methods. Charge-carrier concentration and mobilities were calculated assuming the carrier scattering on acoustic deformation potential as the dominant scattering mechanism, parabolicity of holes dispersion law, implying the Lax model for L-band electrons and neglecting the influence of L-band holes on conductivity. The experimental results and calculations have demonstrated that the electrical properties of the Bi films studied are strongly affected by the grain-boundary density.

In this paper the optical and photoelectrical properties of CdS x Se 1-x films prepared using the screenprinting and sintering technique, were studied. CdCl 2 was used both as a sintering flux and as a doping agent. CuCl was also used as a doping agent. The temperatures and times of preparation varied in the range of 500 -600 °С and 5 -60 min, respectively. The as-prepared films were characterized by the scanning electron microscopy, micro-probe X-Ray analysis, photoluminescence and photoconductance methods. Our investigations have shown that photoresponse of the CdS x Se 1-x films prepared by a screenprinting method can be suitable for the production of large-area photosensitive devices.

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