Polycrystalline bismuth films: Correlation between grain structure and electron transport

Abstract

, Phone: þ375 29 577 28 00, Fax: þ375 17 209 54 45Grain structure and the temperature dependences of resistivity, magnetoresistance, Hall and Seebeck coefficients measured in the range from 4 to 300 K were investigated for polycrystalline bismuth films obtained by the melt spinning (MS) and electrochemical deposition (ECD) methods. Charge-carrier concentration and mobilities were calculated assuming the carrier scattering on acoustic deformation potential as the dominant scattering mechanism, parabolicity of holes dispersion law, implying the Lax model for L-band electrons and neglecting the influence of L-band holes on conductivity. The experimental results and calculations have demonstrated that the electrical properties of the Bi films studied are strongly affected by the grain-boundary density.

Temperature dynamics of the electronic structure in dilute Bi-Sn alloys

“…α lies in range (1-2)×10 5 W/m 2 K, the difference in media and melt temperature was about 400 K. All the other parameters were taken as for pure Bi. Therefore, estimated cooling speed was 10 6 -10 7 (K s) −1 as in work [33].…”

“…The rMR temperature dependencies of doped samples (2)-(6) are not monotonous. The well-known expression [23,33,40,41] for rMR establishes the square dependence on the carrier's mo-…”

“…The other details on grain structure are given in [33]. X-ray diffraction (XRD) patterns were measured with X-Pert PRO produced by PANalytical system (Netherland).…”

“…Methods based on cyclotron resonance [29,30] and Shubnikov-de Haas oscillations [16,31] require low temperatures and very high quality of samples. The galvanomagnetic measurements [23,32,33] of the Hall effect and magnetoresistance allowed broader range of temperatures, but usually need achievement of weak or strong magnetic field limits that is difficult in case of very low or high carrier mobility. The modern quantitative mobility spectrum analysis (QMSA) methods [10][11][12][34][35][36][37] use information in all available ranges of magnetic fields and require minimum external input parameters for the computational procedure.…”

Investigation of growth characteristics and semimetal–semiconductor transition of polycrystalline bismuth thin films

“…In recent years, research on the preferred orientation of Bi thin films has made some progress (Marcano et al, 2010(Marcano et al, , 2013Liao et al, 2014;Fedotov et al, 2015Fedotov et al, , 2016. Wu found that Bi thin films with (111) preferred orientation could be obtained on glass substrates at temperatures ranging from À40 to 93 C via pulse laser deposition, while the orientation was random when the substrate temperature rose to 200 C (Wu & Chern, 2008).…”