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A systematic study of Be diffusion from a Be-doped (3×1019 cm-3) In0.53Ga0.47As epilayer sandwiched between undoped InP epilayers was carried out. Using the boundary conditions and the segregation phenomena at InGaAs/InP interfaces, and taking into account built-in electric field, Fermi-level and bulk self-interstitial generation/annihilation effects, the concentration profiles of Be in the InGaAs/InP heterostructure have been simulated according to two `kick-out' models. Comparison with experimental data shows that the first model, involving neutral Be interstitials in InGaAs and singly positively charged Be interstitials in InP, gives a better description than the second one, using neutral Be interstitials in InGaAs and InP.