A systematic study of Be diffusion from a Be-doped (3×1019 cm-3) In0.53Ga0.47As epilayer sandwiched
between undoped InP epilayers was carried out. Using the boundary
conditions and the segregation phenomena at InGaAs/InP interfaces,
and taking into account built-in electric field, Fermi-level and
bulk self-interstitial generation/annihilation effects, the
concentration profiles of Be in the InGaAs/InP heterostructure have
been simulated according to two `kick-out' models. Comparison with
experimental data shows that the first model, involving neutral Be
interstitials in InGaAs and singly positively charged Be
interstitials in InP, gives a better description than the second
one, using neutral Be interstitials in InGaAs and InP.
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