A model for diffusion of beryllium in InGaAs/InP heterostructures

Ihaddadene, M.; Koumetz, S.; Latry, Olivier; Ketata, K.; Kétata, M.; Dubois, C.

doi:10.1016/s0921-5107(00)00592-4

Cited by 4 publications

(6 citation statements)

References 6 publications

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“…13 By considering the results associated with superlattice disordering, Yu et al 15 concluded that Be diffusion in GaAs is governed by the latter mechanism. This conclusion has received large consent in the literature, 14,17,21 so that in this work the kick-out mechanism is assumed to determine the interchange between Be i and Be s according to the reaction:…”

Section: Simulation Proceduresmentioning

confidence: 99%

“…The hole concentration p is usually obtained under the local neutrality approximation ͑LNA͒. 15,16,21 However, this approximation does not allow the correct evaluation of the electric field just in the proximity of the diffusion front, so that in this work the Poisson equation has been solved at each step of the diffusion simulation by the Newton's method, even if this procedure strongly increases the calculation time. The influence of the LNA approximation on the fitting results is discussed in more detail elsewhere.…”

Section: Simulation Proceduresmentioning

confidence: 99%

“…The procedure described above will be hereafter referred to as ''usual,'' since it is based on the same physical assumptions made by several authors. [15][16][17]21 Nevertheless, there are two original features of our calculation method that deserve a brief comment. The former is the introduction of the variable .…”

Section: Simulation Proceduresmentioning

confidence: 99%

“…This is a slight modification of the conventional method that significantly improves the simulation procedure since it allows to reduce to three the number of fitting parameters, which should otherwise be four. [15][16][17]21 The latter feature is the use of K as a fitting parameter. Indeed, in the literature K is calculated by the expression:…”

Section: Simulation Proceduresmentioning

confidence: 99%

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Be diffusion in molecular beam epitaxy-grown GaAs structures

Mosca

Bussei

Franchi

et al. 2003

Journal of Applied Physics

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Beryllium diffusion is considered in heavily doped p-type GaAs structures grown by molecular beam epitaxy (MBE). Secondary ion mass spectrometry (SIMS) measurements performed on samples which underwent rapid thermal processing (RTP) experiments at 850 °C for 30 s show that (i) Be diffusion is faster in p/p+/p structures than in p/p+ ones and (ii) an increase of the As4/Ga flux ratio during the MBE growth affects Be diffusion only in p/p+ structures. These results are discussed by modeling Be diffusion according to a substitutional–interstitial diffusion mechanism where Be transition from substitutional to interstitial takes place by a kick-out process. The modeling procedure, which has been previously used to simulate Be and Zn diffusion in GaAs and in other related compounds, has been modified in order to account for the lacking of equilibrium in the initial concentration of Ga interstitials. It is shown that when the lacking of equilibrium is accounted for at the beginning of the annealing experiment, a satisfactory description of the SIMS results has been achieved in both p/p+ and p/p+/p structures, also considering samples grown by different As4/Ga flux ratios. The modeling results allow us to conclude that in the p/p+/p structures the concentration of point defects (e.g., IGa) in the regions cladding the base layer affects, to a major extent, Be diffusion during RTP, so that an efficient reduction of Be diffusivity is expected only when the whole structure is grown by high V/III flux ratios.

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Section: Simulation Proceduresmentioning

confidence: 99%

Section: Simulation Proceduresmentioning

confidence: 99%

Section: Simulation Proceduresmentioning

confidence: 99%

Section: Simulation Proceduresmentioning

confidence: 99%

See 2 more Smart Citations

Be diffusion in molecular beam epitaxy-grown GaAs structures

Mosca

Bussei

Franchi

et al. 2003

Journal of Applied Physics

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“…However, the internal active zone temperature during ageing is close to 500 K according to Equation (6) and cannot stimulate dopant diffusion. Indeed the necessary temperature to activate dopant diffusion must be greater than 1000 K 38,42,44 . Finally, the last parameter, allowing us to explain the drop in the γ parameter, is due to an increase in defect density N def located in the active layer.…”

Section: Failure Mechanism Diagnostic Using Optical Characterizationsmentioning

confidence: 99%

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Deshayes

Béchou

Verdier

et al. 2005

Quality & Reliability Eng

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Numerous papers have already reported various results on electrical and optical performances of GaAs-based materials for optoelectronic applications. Other papers have proposed some methodologies for a classical estimation of reliability of GaAs compounds using life testing methods on a few thousand samples over 10 000 hours of testing. In contrast, fewer papers have studied the complete relation between degradation laws in relation to failure mechanisms and the estimation of lifetime distribution using accelerated ageing tests considering a short test duration, low acceleration factor and analytical extrapolation. In this paper, we report the results for commercial InGaAs/GaAs 935 nm packaged light emitting diodes (LEDs) using electrical and optical measurements versus ageing time. Cumulative failure distributions are calculated using degradation laws and process distribution data of optical power. A complete methodology is described proposing an accurate reliability model from experimental determination of the failure mechanisms (defect diffusion) for this technology. Electrical and optical characterizations are used with temperature dependence, short-duration accelerated tests (less than 1500 h) with an increase in bias current (up to 50%), a small number of samples (less than 20) and weak acceleration factors (up to 240).

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Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study

Liu

Manzhos

et al. 2017

Acta Materialia

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A roadblock in utilizing InGaAs for scaled-down electronic devices is its anomalous dopant diffusion behavior; specifically, existing models are not able to explain available experimental data on beryllium diffusion consistently. In this paper, we propose a comprehensive model, taking selfinterstitial migration and Be interaction with Ga and In into account. Density functional theory (DFT) calculations are first used to calculate the energy parameters and charge states of possible diffusion mechanisms. Based on the DFT results, continuum modeling and kinetic Monte Carlo simulations are then performed. The model is able to reproduce experimental Be concentration profiles. Our results suggest that the Frank-Turnbull mechanism is not likely, instead, kick-out reactions are the dominant mechanism. Due to a large reaction energy difference, the Ga interstitial and the In interstitial play different roles in the kick-out reactions, contrary to what is usually assumed. The DFT calculations also suggest that the influence of As on Be diffusion may not be negligible.arXiv:1608.00779v2 [cond-mat.mtrl-sci]

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A model for diffusion of beryllium in InGaAs/InP heterostructures

Cited by 4 publications

References 6 publications

Be diffusion in molecular beam epitaxy-grown GaAs structures

Be diffusion in molecular beam epitaxy-grown GaAs structures

Long‐term Reliability Prediction of 935 nm LEDs Using Failure Laws and Low Acceleration Factor Ageing Tests

Grown-in beryllium diffusion in indium gallium arsenide: An ab initio, continuum theory and kinetic Monte Carlo study

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