Doping of high concentration of Beryllium in GaAs layers, by molecular-beam epitaxy

Noh, Jungpil; Cho, Gyu-Bong; Jung, D. W.; Ōtsuka, N.; Nam, Tae Hyun; Kim, K.W.

doi:10.1016/j.jallcom.2010.04.222

Search citation statements

Order By: Relevance

Paper Sections

Select...

Be Doping Characteristics For the P + -Gaas Layer1

Citation Types

Supporting

Mentioning

Contrasting

Year Published

2012

Publication Types

Select...

Article1

Relationship

Self Cite0

Independent1

Authors

Journals

Cited by 1 publication

(1 citation statement)

References 15 publications

(12 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…For acceptor doping, as widely reported in the field of MBE of GaAs [72][73][74][75], Be is a good candidate for heavy p-doping and for steep impurity profiles because of its low diffusion coefficient [76]. The covalent radius of Be is similar to the radii of Ga and As, and the lattice strain in Be-doped GaAs was expected to be small.…”

Section: Be Doping Characteristics For the P + -Gaas Layermentioning

confidence: 89%

Sidewall GaAs tunnel junctions fabricated using molecular layer epitaxy

Ohno

Oyama

2012

Science and Technology of Advanced Materials

View full text Add to dashboard Cite

In this article we review the fundamental properties and applications of sidewall GaAs tunnel junctions. Heavily impurity-doped GaAs epitaxial layers were prepared using molecular layer epitaxy (MLE), in which intermittent injections of precursors in ultrahigh vacuum were applied, and sidewall tunnel junctions were fabricated using a combination of device mesa wet etching of the GaAs MLE layer and low-temperature area-selective regrowth. The fabricated tunnel junctions on the GaAs sidewall with normal mesa orientation showed a record peak current density of 35 000 A cm −2 . They can potentially be used as terahertz devices such as a tunnel injection transit time effect diode or an ideal static induction transistor.

show abstract