Detection of HC in exhaust gases by an array of MISiC sensors

Chemistry of one dimensional silicon carbide materials: Principle, production, application and future prospects

“…Gas sensors based on porous SiC exhibit improved sensing performances such as relatively rapid response speed [194][195], higher sensitivity [196], good selectivity [197] and long-term stability [198] which have been broadly studied for monitoring harmful exhaust gases produced from industrial processes. Usually, SiC-based gas sensors were constructed as Schottky diodes, field effect transistors or capacitor systems using SiC as a dielectric material [199] and the gas concentrations were determined by measuring variation of electrical current or capacitance when gas molecules were adsorbed on the surface of the active materials.…”

Microsensors

“…However, there is a field-effect diode made from SiC that can be operated at more than 700 oc and responds in milliseconds (Svenningstorp et al 2000(Svenningstorp et al , 2001. Figure 8.62 shows the response of a MISiC Schottky diode to the exhaust gases from a car engine (Savage et al 2000).…”

The role of oxygen in hydrogen sensing by a platinum-gate silicon carbide gas sensor: An ultrahigh vacuum study

“…35 The same essential mechanism allows the detection of any hydrogen-containing molecule that will dehydrogenate on the surface of the catalytic gate. Many hydrocarbons meet these criteria and can be detected, 3,4,8,24,40 as can hydrogen sulfide. 37 Figure 4 shows the device response to propene ͑C 3 H 6 ͒, a prototypical linear unsaturated hydrocarbon.…”

“…2,5,6 Figure 1 shows a schematic diagram of a typical device. Such devices have been successfully demonstrated for monitoring automotive exhaust, 7,8 flue gases from power plants, [9][10][11] and selective catalytic reduction in diesel engines. 12 Our understanding of the sensing mechanism is based largely on the pioneering work of Lundström and co-workers, [13][14][15][16][17][18][19] Kreisl et al, 20,21 and Salomonsson et al 22 on similar silicon-based devices.…”