Designing Polymers to Enable Nanoscale Thermomechanical Data Storage

Gotsmann, Bernd; Knoll, Armin; Pratt, R. H.; Frommer, Jane; Hedrick, James L.; Duerig, Urs

doi:10.1002/adfm.200902241

Cited by 26 publications

(31 citation statements)

References 47 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Nanoscale wear experiments were performed using two counter surfaces: a 100 nm‐thick film of cross‐linked polyaryletherketone (PAEK) polymer spun‐cast onto Si, and a 100 nm thermal SiO 2 layer on Si. The polymer serves as model system for data storage47 and lithography applications,2 whereas SiO 2 , which is much more abrasive, serves as a model surface for CMOS (complementary metal‐oxide‐semiconductor) metrology applications 26…”

Section: Wear Testingmentioning

confidence: 99%

Wear‐Resistant Nanoscale Silicon Carbide Tips for Scanning Probe Applications

Lantz

Gotsmann

Jaroenapibal

et al. 2012

Adv Funct Materials

View full text Add to dashboard Cite

The search for hard materials to extend the working life of sharp tools is an age-old problem. In recent history, sharp tools must also often withstand high temperatures and harsh chemical environments. Nanotechnology extends this quest to tools such as scanning probe tips that must be sharp on the nanoscale, but still very physically robust. Unfortunately, this combination is inherently contradictory, as mechanically strong, chemically inert materials tend to be diffi cult to fabricate with nanoscale fi delity. Here a novel process is described, whereby the surfaces of pre-existing, nanoscale Si tips are exposed to carbon ions and then annealed, to form a strong silicon carbide (SiC) layer. The nanoscale sharpness is largely preserved and the tips exhibit a wear resistance that is orders of magnitude greater than that of conventional silicon tips and at least 100-fold higher than that of monolithic, SiO-doped diamond-like-carbon (DLC) tips. The wear is well-described by an atom-byatom wear model, from which kinetic parameters are extracted that enable the prediction of the long-time scale reliability of the tips.

show abstract

Section: Wear Testingmentioning

confidence: 99%

Wear‐Resistant Nanoscale Silicon Carbide Tips for Scanning Probe Applications

Lantz

Gotsmann

Jaroenapibal

et al. 2012

Adv Funct Materials

View full text Add to dashboard Cite

show abstract

“…Now, researchers at IBM's Zurich Research Laboratory in Switzerland have clocked the rate of data loss. They have calculated that at 85°C, a temperature often used to assess data retention, it would lose just 10% to 20% of information over a decade, comparable to Flash memory [ 157 ].…”

Section: Reviewmentioning

confidence: 99%

Overview of emerging nonvolatile memory technologies

et al. 2014

View full text Add to dashboard Cite

Nonvolatile memory technologies in Si-based electronics date back to the 1990s. Ferroelectric field-effect transistor (FeFET) was one of the most promising devices replacing the conventional Flash memory facing physical scaling limitations at those times. A variant of charge storage memory referred to as Flash memory is widely used in consumer electronic products such as cell phones and music players while NAND Flash-based solid-state disks (SSDs) are increasingly displacing hard disk drives as the primary storage device in laptops, desktops, and even data centers. The integration limit of Flash memories is approaching, and many new types of memory to replace conventional Flash memories have been proposed. Emerging memory technologies promise new memories to store more data at less cost than the expensive-to-build silicon chips used by popular consumer gadgets including digital cameras, cell phones and portable music players. They are being investigated and lead to the future as potential alternatives to existing memories in future computing systems. Emerging nonvolatile memory technologies such as magnetic random-access memory (MRAM), spin-transfer torque random-access memory (STT-RAM), ferroelectric random-access memory (FeRAM), phase-change memory (PCM), and resistive random-access memory (RRAM) combine the speed of static random-access memory (SRAM), the density of dynamic random-access memory (DRAM), and the nonvolatility of Flash memory and so become very attractive as another possibility for future memory hierarchies. Many other new classes of emerging memory technologies such as transparent and plastic, three-dimensional (3-D), and quantum dot memory technologies have also gained tremendous popularity in recent years. Subsequently, not an exaggeration to say that computer memory could soon earn the ultimate commercial validation for commercial scale-up and production the cheap plastic knockoff. Therefore, this review is devoted to the rapidly developing new class of memory technologies and scaling of scientific procedures based on an investigation of recent progress in advanced Flash memory devices.

show abstract

“…Thus, the distribution of the temperature field can only be calculated directly based on the measurement of the maxL dec and maxh dec . Since the two feature sizes of the air gap structures had an approximate linear relationship with the tip temperature, at a certain tip temperature, when the heat conduction in the air gap reaches the steady state, the feature sizes can be determined, and the temperature field distribution at this temperature can be calculated quantitatively by combining Equations (24)- (26). However, the first two feature sizes required to calibrate the isothermal surface of the decomposition threshold temperature can only be measured directly through the experimental tests.…”

Section: Simplified Steady State 3d Modelmentioning

confidence: 99%

“…In addition, when nanodevices such as data storage chips and Pirani vacuum gauges are used under service conditions, the thermal conduction of the air gap has a great influence on their performance. For example, Gotsmann et al [26] indicated that the high-density data storage chips they designed were capable of 10-year of data retention at 85 • C. However, once the temperature of the operating environment exceeds 85 • C, it may cause thermal damage to the nanoscale hollow storage points [27,28].Heat transfer in nano/microscale air gaps consistently exist during nanostructure fabrication through thermal decomposition, and in nanomaterial applications in a thermal environment. However, there are only a few works on the nano/microscale air gap.…”

mentioning

confidence: 99%

Nano/Microscale Thermal Field Distribution: Conducting Thermal Decomposition of Pyrolytic-Type Polymer by Heated AFM Probes

Geng

Yan

2020

Nanomaterials

View full text Add to dashboard Cite

In relevant investigations and applications of the heated atomic force microscope (AFM) probes, the determination of the actual thermal distribution between the probe and the materials under processing or testing is a core issue. Herein, the polyphthalaldehyde (PPA) film material and AFM imaging of the decomposition structures (pyrolytic region of PPA) were utilized to study the temperature distribution in the nano/microscale air gap between heated tips and materials. Different sizes of pyramid decomposition structures were formed on the surface of PPA film by the heated tip, which was hovering at the initial tip–sample contact with the preset temperature from 190 to 220 °C for a heating duration ranging from 0.3 to 120 s. According to the positions of the 188 °C isothermal surface in the steady-state probe temperature fields, precise 3D boundary conditions were obtained. We also established a simplified calculation model of the 3D steady-state thermal field based on the experimental results, and calculated the temperature distribution of the air gap under any preset tip temperature, which revealed the principle of horizontal (<700 nm) and vertical (<250 nm) heat transport. Based on our calculation, we fabricated the programmable nano-microscale pyramid structures on the PPA film, which may be a potential application in scanning thermal microscopy.

show abstract

Designing Polymers to Enable Nanoscale Thermomechanical Data Storage

Cited by 26 publications

References 47 publications

Wear‐Resistant Nanoscale Silicon Carbide Tips for Scanning Probe Applications

Wear‐Resistant Nanoscale Silicon Carbide Tips for Scanning Probe Applications

Overview of emerging nonvolatile memory technologies

Nano/Microscale Thermal Field Distribution: Conducting Thermal Decomposition of Pyrolytic-Type Polymer by Heated AFM Probes

Contact Info

Product

Resources

About