Design, measurement and analysis of CMOS polysilicon TFT operational amplifiers

Yang, Haigang; Fluxman, S.; Reita, C.; Migliorato, P.

doi:10.1109/4.293120

Cited by 30 publications

(6 citation statements)

References 6 publications

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“…Since the overall gain is mainly contributed by the input stage [13], the aspect ratios of the final stage output TFTs should not be affected much. The theoretical gain (square root of beta ratio) of the output stage TFTs (T18, T19) is quite similar with [10], [15] and measured performance is better than [12], and [14] in the aspect of f c , f ug , GBWP, and PM. This is a priority for achieving a stable output [12], [15].…”

Section: B Designing the Op-amp Circuitsupporting

confidence: 53%

“…Even though having SG structured TFT, in [12], and [15] still shows better yield than this current report. We assume this is for using higher supply voltage of ± 15 V. Although a-Si [13] and poly-Si [14] op-amp still show a higher gain, in the context of f c , f ug , GBWP, PM, and slew rate, this fabricated DG op-amp outperforms all. f c is 5 times higher than the flexible a-IGZO based one [10] and 50 times than that of the glass-based poly-Si [14] reports.…”

Section: Resultsmentioning

confidence: 96%

“…We assume this is for using higher supply voltage of ± 15 V. Although a-Si [13] and poly-Si [14] op-amp still show a higher gain, in the context of f c , f ug , GBWP, PM, and slew rate, this fabricated DG op-amp outperforms all. f c is 5 times higher than the flexible a-IGZO based one [10] and 50 times than that of the glass-based poly-Si [14] reports. f ug is also 5 times higher than the flexible a-IGZO based one [10] and 79 times of the a-Si [13] based one.…”

Section: Resultsmentioning

confidence: 96%

“…Recently, Kim et al [12] demonstrated a solution processed op-amp on the glass substrate with 19-TFTs and using direct light pattering (DLP) method with the A v of 24.6 dB and f c of 0.47 kHz. Although some other reports using a-Si [13] and poly-Si [14] shows a higher gain but lacks in very limited f c and lower slew rate. a-IGZO TFT op-amp reports are handful [6], [10]- [12], [15] in comparing to CMOS counterpart.…”

Section: Introductionmentioning

confidence: 90%

See 3 more Smart Citations

A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs

Rahaman

Chen

Hasan

et al. 2019

IEEE J. Electron Devices Soc.

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We fabricate an operational amplifier (op-amp) composed with the coplanar amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistors (TFTs). The circuit consisted of 19-TFTs and designed on a glass substrate in both dual gate (DG) and single gate (SG) structure for performance evaluation. Having the yield of a total voltage gain (A v ) of 23.5 dB, a cutoff frequency (f c ) of 500 kHz, a unit gain frequency (f ug ) of 2.37 MHz, gain-bandwidth product (GBWP) of 7500 kHz, a slew rate (up/down) of (2.1/1.2) V/µs, and a phase margin (PM) of 102 • at a supply voltage of ±10 V, the fabricated DG TFT op-amp demonstrates good performance among all a-IGZO-based literature. INDEX TERMSCoplanar a-IGZO TFTs, dual gate, single gate, operational amplifier (op-amp).

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Section: B Designing the Op-amp Circuitsupporting

confidence: 53%

Section: Resultsmentioning

confidence: 96%

Section: Resultsmentioning

confidence: 96%

Section: Introductionmentioning

confidence: 90%

See 2 more Smart Citations

A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs

Rahaman

Chen

Hasan

et al. 2019

IEEE J. Electron Devices Soc.

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“…However, note that the use of the operational amplifier makes the scheme almost inapplicable to poly-Si TFT circuits as it is, even though this two-step DAC scheme manifests high area efficiency, as explained above. Results of some research on the operational amplifier with poly-Si TFTs have been reported, [19][20][21] but it is still very challenging to realize an operational amplifier with poly-Si TFTs because of their low uniformity and the time variance of electrical characteristics such as threshold voltage and mobility.…”

Section: Concept Of Area-efficient Two-step Dac Schemementioning

confidence: 99%

An 8-bit Data Driving Scheme Based on Two-Step Digital-to-Analog Conversion for Integrated Data Drivers of Active-Matrix Organic Light-Emitting Diodes

Kim

Choi

2012

Jpn. J. Appl. Phys.

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The two-step digital-to-analog conversion (DAC) scheme has been reported to be very area-efficient for thin-film transistor-liquid crystal display (TFT-LCD) data driver ICs, but it is not as well suited as it is for polycrystalline silicon (poly-Si) TFT integrated circuits. The charge redistribution in the two-step DAC process requires an operational amplifier in principle, which is most challenging for poly-Si TFT circuits. The proposed two-step DAC for active-matrix organic light-emitting diodes (AMOLEDs) makes the operational amplifier unnecessary by appropriately exploiting the preexisting capacitors in the pixel to compensate for the characteristic variations of TFTs. Moreover, the second-step DAC occurs at the same time as threshold voltage compensation, and it does not require additional time. By thoroughly analyzing area efficiency depending on the resolution decomposition between the first- and second-step DACs, we found that 5-bit coarse plus 3-bit fine DACs are best in terms of circuit area. When we designed a layout of the proposed 8-bit DAC on the basis of the 4 µm design rules, the DAC circuit area is no more than 72×637 µm2, which, to the best of our knowledge, is the most compact to date.

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Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

Yan,

Wang,

Yan

et al. 2023

Adv Funct Materials

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High‐performance thin‐film transistors (TFTs) integrated circuits (ICs) have become increasingly necessary to meet the emerging demands such as healthcare, edge computing, and the Internet of Things, etc. This article aims to point out the potential development trends and bottlenecks of TFT ICs, enhancing their performance in terms of electronic performance, stability, consistency, CMOS design, and manufacturing capability. Basic device structures and overall metrics of TFT ICs are explored, as well as their superiority compared to silicon‐based ultrathin chips. Hydrogenated amorphous silicon, low‐temperature polycrystalline silicon, and amorphous oxide semiconductors are widely used in displays due to their ability to be deposited on large areas at low processing temperatures and low cost, and are validated in many prototypes for TFT ICs. Their conduction mechanisms, process flows, performance evaluation, and recent advances are comprehensively viewed. In addition, the potential of emerging low‐dimensional materials as next‐generation channel materials is discussed, along with their limitations and progress in this field. Finally, the major challenges in manufacturing high‐performance TFT ICs and future perspectives are summarized.

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Design, measurement and analysis of CMOS polysilicon TFT operational amplifiers

Cited by 30 publications

References 6 publications

A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs

A High Performance Operational Amplifier Using Coplanar Dual Gate a-IGZO TFTs

An 8-bit Data Driving Scheme Based on Two-Step Digital-to-Analog Conversion for Integrated Data Drivers of Active-Matrix Organic Light-Emitting Diodes

Thin‐Film Transistors for Integrated Circuits: Fundamentals and Recent Progress

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