Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing

Lee, Suhyeong; Kim, Ji Min; Kim, Changhyun; Kim, Hyun Woo; Kang, Hae-Lim; Ha, Min−Woo; Kim, Hyeong Joon

doi:10.1016/j.ceramint.2018.04.190

Cited by 7 publications

(5 citation statements)

References 39 publications

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“…Figure 5b depicts a variation in the etch rate of the SiO 2 thin films with 70 s etching when the temperature annealed from 300 to 800 • C. It is noted that the etch rate decreases sharply and then decreases slowly when the annealing temperature gradually increases. The etch rate at an annealing temperature of 200 • C is about 1.6 nm/s, while it decreases to about 0.3 nm/s when the annealing temperature is 800 • C. The SiO 2 thin films were easily decomposed in a diluted HF acid solution because they were not fully densified when their annealing temperatures were lower [28]. This result is also supported by the change in refractive index, because it commonly corresponds to the densification of the SiO 2 thin films.…”

Section: Resultsmentioning

confidence: 99%

“…The etch rate at an annealing temperature of 200 °C is about 1.6 nm/s, while it decreases to about 0.3 nm/s when the annealing temperature is 800 °C. The SiO 2 thin films were easily decomposed in a diluted HF acid solution because they were not fully densified when their annealing temperatures were lower [ 28 ]. This result is also supported by the change in refractive index, because it commonly corresponds to the densification of the SiO 2 thin films.…”

Section: Resultsmentioning

confidence: 99%

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Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

et al. 2021

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In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

et al. 2021

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“…Among several dielectric deposition techniques, atomic layer deposition (ALD) is widely used due to the quality of the oxide, its superior uniformity, the precise control of thickness and process steps, and its low deposition temperature. The deposition of aluminium oxide (Al2O3) layers and their use as gate dielectrics in MOSCAP and MOSFET structures on 4H-SiC has been widely investigated [3][4][5] with fewer reports being made on the deposition of SiO2 [6][7][8]. Promising interfacial properties of ALD-deposited Al2O3 layers on 4H-SiC were reported to result in high field-effect mobilities (µFE) of 64 cm 2 /Vs [4] for purely ALD-deposited dielectrics and 258 cm 2 /Vs [4] for a combination of thermal and ALD-deposited oxides in MOSFETs [3,4].…”

Section: Introductionmentioning

confidence: 99%

“…Although both Al2O3 and SiO2 ALDdeposited layers have shown promising electrical properties [9], there are still issues related to the bulk oxide and the oxide-SiC interface that need to be remedied; for instance, ALD-deposited layers can form porous oxides, causing problematic electric properties such as increased leakage current and premature dielectric breakdown. First investigations into the impact of 1100 °C post-deposition annealing (PDA) in Argon (Ar) [8] and nitrous oxide (N2O) [5,6] ambients on deposited layers have reported improvements in the I-V and C-V performance of MOSCAPs, reducing both leakage currents and flatband voltages.…”

Section: Introductionmentioning

confidence: 99%

Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition

Renz

Vavasour

Gammon

et al. 2020

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A systematic post-deposition annealing study on Silicon Carbide (SiC) metal-oxide-semiconductor capacitors (MOSCAPs) using atomic layer deposition (ALD)-deposited silicon dioxide (SiO2) layers was carried out. Anneals were done in oxidising (N2O), inert (Ar) and reducing (H2:N2) ambients at elevated temperatures from 900°C to 1300°C for 1 hour. Electrical characterisation results show that the forming gas treatment at 1100°C reduces the flatband voltage to 0.23 V from 10 V for as-deposited SiO2 layers. The density of interface traps (DIT) was also reduced by one order of magnitude to 2×1011 cm-2 eV-1 at EC-ET = 0.2 eV. As an indicator of the improvement, characterisation by x-ray photoelectron spectroscopy (XPS) showed that silicon enrichment present in as-deposited layers was largely reduced by the forming gas anneal, improving the stoichiometry. Time-dependent dielectric breakdown (TDDB) results showed that the majority of forming gas annealed samples broke down at breakdown fields of 12.5 MV × cm-1, which is about 2.5 MV × cm-1 higher than for thermally oxidised samples.

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“…In contrast, forming the gate oxide on with 4H-SiC MOS using physical vapor deposition has been rarely reported [20][21][22][23]. This technique is a simple low-temperature method with a fast deposition rate.…”

Section: Introductionmentioning

confidence: 99%

Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO₂/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing

et al. 2019

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The effect of sweeping direction on the capacitance–voltage (C–V) behavior of sputtered SiO2/4H-silicon carbide (SiC) metal-oxide semiconductor capacitors was investigated. Nitric oxide post-deposition annealing was conducted for the sputtered SiO2 on 4H-SiC. The sweeping direction of the measurement changed the C–V behavior and effective oxide charge density (Qeff) because of trapped electrons at the accumulation and detrapped electrons at the depletion. The nitrogen atoms near interface between SiO2 and 4H-SiC as a result of nitric oxide post-deposition annealing shifted the flat-band voltage in the negative direction. When the C–V was measured from depletion to accumulation, the absolute value of the Qeff after 60 min long annealing, 3.465 × 1010 cm−2 was less than that of the Qeff after 30 min long annealing, −2.912 × 1011 cm−2. The mechanisms of the nitric oxide post-deposition annealing on sputtered SiO2 on 4H-SiC are film densification and nitrogen passivation of the defects.

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Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing

Cited by 7 publications

References 39 publications

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition

Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO₂/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing

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Densification of silicon dioxide formed by plasma-enhanced atomic layer deposition on 4H-silicon carbide using argon post-deposition annealing

Cited by 7 publications

References 39 publications

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Development of High-Quality Gate Oxide on 4H-SiC Using Atomic Layer Deposition

Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO2/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing

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Effect of sweeping direction on the capacitance−voltage behavior of sputtered SiO₂/4H-SiC metal-oxide semiconductors after nitric oxide post-deposition annealing