Deposition and Characterization of RP-ALD SiO2 Thin Films with Different Oxygen Plasma Powers

Abstract

In this study, silicon oxide (SiO2) films were deposited by remote plasma atomic layer deposition with Bis(diethylamino)silane (BDEAS) and an oxygen/argon mixture as the precursors. Oxygen plasma powers play a key role in the quality of SiO2 films. Post-annealing was performed in the air at different temperatures for 1 h. The effects of oxygen plasma powers from 1000 W to 3000 W on the properties of the SiO2 thin films were investigated. The experimental results demonstrated that the SiO2 thin film growth per cycle was greatly affected by the O2 plasma power. Atomic force microscope (AFM) and conductive AFM tests show that the surface of the SiO2 thin films, with different O2 plasma powers, is relatively smooth and the films all present favorable insulation properties. The water contact angle (WCA) of the SiO2 thin film deposited at the power of 1500 W is higher than that of other WCAs of SiO2 films deposited at other plasma powers, indicating that it is less hydrophilic. This phenomenon is more likely to be associated with a smaller bonding energy, which is consistent with the result obtained by Fourier transformation infrared spectroscopy. In addition, the influence of post-annealing temperature on the quality of the SiO2 thin films was also investigated. As the annealing temperature increases, the SiO2 thin film becomes denser, leading to a higher refractive index and a lower etch rate.

Shear Bond Strength to Enamel, Mechanical Properties and Cellular Studies of Fiber-Reinforced Composites Modified by Depositing SiO2 Nanofilms on Quartz Fibers via Atomic Layer Deposition

“…Zhang showed that compared with other modification methods, the thickness of ALD-deposited SiO 2 nanofilms can be precisely controlled at the nanoscale, and the film thickness increases linearly with the number of ALD cycles. 32 , 33 In the current study, SE findings also confirmed the abovementioned point. The thickness of the SiO 2 nanofilms deposited at 200 °C demonstrated a linear relationship with a deposition rate of 0.059 ± 0.005 nm/cycle.…”

“…The film thickness was measured using SE (M-2000v, J A Woollam, USA) at an incidence angle of 65° and the wavelength region from 200 to 2000 nm to indirectly reflect the thickness of SiO 2 nanofilms. 32 , 33 …”

Nanopores with customized 3D shape: tailored structures for nanoscale applications

“…After dielectric deposition, the PDMS layer is mechanically removed. For ALD, thermal deposition at low temperatures is preferred as it produces higher-quality SiO2 59 . Additionally, plasma ALD can increase the thickness of the photoresist layer.…”

Reinforcement of Bonding Strength between Dental Y‐TZP and Resin via Nano‐Thin and Conformal SiO2 Films by Atomic Layer Deposition

“…This conclusion is consistent with other reports. [33,34] Therefore, the thickness of the film could be precisely adjusted by controlling the number of cycles. In contrast to linear ALD, Z-Prime Plus was coated manually, and its thickness depended on the number of layers.…”

“…[ 20 ] ALD may produce nanoscale films with high precision, [ 21 ] controllable thickness, and extreme uniformity. [ 22,23 ] ALD has already been widely used to deposit films on a variety of materials and is thus expected to overcome the drawbacks of other common SiO 2 film deposition methods because of the following ALD advantages. [ 24 ] The films are deposited by gas–solid chemical reactions; thus, the films are firmly and stably bonded with the substrate.…”