We report a size dependence of Young's modulus in [0001] oriented ZnO nanowires (NWs) with diameters ranging from 17 to 550 nm for the first time. The measured modulus for NWs with diameters smaller than about 120 nm is increasing dramatically with the decreasing diameters, and is significantly higher than that of the larger ones whose modulus tends to that of bulk ZnO. A core-shell composite NW model in terms of the surface stiffening effect correlated with significant bond length contractions occurred near the {1010} free surfaces (which extend several layers deep into the bulk and fade off slowly) is proposed to explore the origin of the size dependence, and present experimental result is well explained. Furthermore, it is possible to estimate the size-related elastic properties of GaN nanotubes and relative nanostructures by using this model.

Silicon nanowires (SiNWs) with desirable axial crystallographic orientations can be readily prepared by a novel chemical‐etching technique (see SEM image). The as‐synthesized SiNW arrays significantly suppress reflection over the visible‐light spectral range and are therefore promising candidates for antireflection coatings of photovoltaic cells despite exhibiting a lower efficiency than non‐nanowire‐based devices at this stage of development.

No abstract

A novel strategy for preparing large‐area, oriented silicon nanowire (SiNW) arrays on silicon substrates at near room temperature by localized chemical etching is presented. The strategy is based on metal‐induced (either by Ag or Au) excessive local oxidation and dissolution of a silicon substrate in an aqueous fluoride solution. The density and size of the as‐prepared SiNWs depend on the distribution of the patterned metal particles on the silicon surface. High‐density metal particles facilitate the formation of silicon nanowires. Well‐separated, straight nanoholes are dug along the Si block when metal particles are well dispersed with a large space between them. The etching technique is weakly dependent on the orientation and doping type of the silicon wafer. Therefore, SiNWs with desired axial crystallographic orientations and doping characteristics are readily obtained. Detailed scanning electron microscopy observations reveal the formation process of the silicon nanowires, and a reasonable mechanism is proposed on the basis of the electrochemistry of silicon and the experimental results.

This article concerns the detailed investigations on the silver dendrite‐assisted growth of single‐crystalline silicon nanowires, and their possible self‐assembling nanoelectrochemistry growth mechanism. The growth of silicon nanowires was carried out through an electroless metal deposition process in a conventional autoclave containing aqueous HF and AgNO3 solution near room temperature. In order to explore the mechanism and prove the centrality of silver dendrites in the growth of silicon nanowires, other etching solution systems with different metal species were also investigated in this work. The morphology of etched silicon substrates strongly depends upon the composition of the etching solution, especially the metal species. Our experimental results prove that the simultaneous formation of silver dendrites is a guarantee of the preservation of free‐standing nanoscale electrolytic cells on the silicon substrate, and also assists in the final formation of silicon nanowire arrays on the substrate surface.

The recent severe acute respiratory syndrome coronavirus 2 (SARS-CoV-2, previously known as 2019-nCoV) outbreak has engulfed an unprepared world amidst a festive season. The zoonotic SARS-CoV-2, believed to have originated from infected bats, is the seventh member of enveloped RNA coronavirus. Specifically, the overall genome sequence of the SARS-CoV-2 is 96.2% identical to that of bat coronavirus termed BatCoV RaTG13. Although the current mortality rate of 2% is significantly lower than that of SARS (9.6%) and Middle East respiratory syndrome (MERS)

A straightforward metal-particle-induced, highly localized site-specific corrosion-like mechanism was proposed for the formation of aligned silicon-nanowire arrays on silicon in aqueous HF/AgNO3 solution on the basis of convincing experimental results. The etching process features weak dependence on the doping of the silicon wafers and, thus, provides an efficient method to prepare silicon nanowires with desirable doping characteristics. The novel electrochemical properties between silicon and active noble metals should be useful for preparing novel silicon nanostructures and also new optoelectronic devices.

Graphene is an advanced carbon functional material with inherent unique properties that make it suitable for a wide range of applications. It can be synthesized through either the top–down approach involving delamination of graphitic materials or the bottom–up approach involving graphene assembly from smaller building units. Common top–down approaches are exfoliation and reduction while bottom–up approaches include chemical vapour deposition, epitaxial growth, and pyrolysis. A range of materials have been successfully used as precursors in various synthesis methods to derive graphene. This review analyses and discusses the suitability of conventional, plant- and animal-derived, chemical, and fossil precursors for graphene synthesis. Together with its associated technical feasibility and economic and environmental impacts, the quality of resultant graphene is critically assessed and discussed. After evaluating the parameters mentioned above, the most appropriate synthesis method for each precursor is identified. While graphite is currently the most common precursor for graphene synthesis, several other precursors have the potential to synthesize graphene of comparable, if not better, quality and yield. Thus, this review provides an overview and insights into identifying the potential of various carbon precursors for large-scale and commercial production of fit-for-purpose graphene for specific applications.